中国物理B ›› 2025, Vol. 34 ›› Issue (9): 97308-097308.doi: 10.1088/1674-1056/add5ca

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Tunable colossal negative magnetoresistance of topological semimetal EuB6 thin sheets

Ke Zhu(祝轲)1,2,†, Qi Qi(齐琦)1,2,†, Yaofeng Xie(谢耀锋)1,2, Lulu Pan(潘禄禄)1, Senhao Lv(吕森浩)1, Guojing Hu(胡国静)1, Zhen Zhao(赵振)1, Guoyu Xian(冼国裕)3, Yechao Han(韩烨超)2, Lihong Bao(鲍丽宏)1,2,3, Ying Zhang(张颖)1,2, Xiao Lin(林晓)2, Hui Guo(郭辉)1,2, Haitao Yang(杨海涛)1,2,‡, and Hong-Jun Gao(高鸿钧)1,2,§   

  1. 1 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Songshan Lake Materials Laboratory, Dongguan 523808, China
  • 收稿日期:2025-03-07 修回日期:2025-04-22 接受日期:2025-05-08 出版日期:2025-08-21 发布日期:2025-09-15
  • 通讯作者: Haitao Yang, Hong-Jun Gao E-mail:htyang@iphy.ac.cn;hjgao@iphy.ac.cn
  • 基金资助:
    EuB$_{6}$ thin sheets|magnetic topological semimetal|negative magnetoresistance|Kondo effect|weak localization

Tunable colossal negative magnetoresistance of topological semimetal EuB6 thin sheets

Ke Zhu(祝轲)1,2,†, Qi Qi(齐琦)1,2,†, Yaofeng Xie(谢耀锋)1,2, Lulu Pan(潘禄禄)1, Senhao Lv(吕森浩)1, Guojing Hu(胡国静)1, Zhen Zhao(赵振)1, Guoyu Xian(冼国裕)3, Yechao Han(韩烨超)2, Lihong Bao(鲍丽宏)1,2,3, Ying Zhang(张颖)1,2, Xiao Lin(林晓)2, Hui Guo(郭辉)1,2, Haitao Yang(杨海涛)1,2,‡, and Hong-Jun Gao(高鸿钧)1,2,§   

  1. 1 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Songshan Lake Materials Laboratory, Dongguan 523808, China
  • Received:2025-03-07 Revised:2025-04-22 Accepted:2025-05-08 Online:2025-08-21 Published:2025-09-15
  • Contact: Haitao Yang, Hong-Jun Gao E-mail:htyang@iphy.ac.cn;hjgao@iphy.ac.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant No. 2022YFA1204100), the National Natural Science Foundation of China (Grant No. 62488201), the Chinese Academy of Sciences (Grant Nos. XDB33030000 and YSBR-053), and Innovation Program of Quantum Science and Technology (Grant No. 2021ZD0302700).

摘要: EuB$_{6}$, a magnetic topological semimetal, has attracted considerable attention in recent years due to its rich intriguing physical properties, including a colossal negative magnetoresistance (CNMR) ratio exceeding $-80%$, a topological phase transition and a predicted quantum anomalous Hall effect (QAHE) approaching the two-dimensional (2D) limit. Yet, studies of the influence of the dimensionality approaching 2D on the electronic transport properties of EuB$_{6}$ are still scarce. In this work, EuB$_{6}$ thin sheets with thicknesses ranging from 35 μm to 180 μm were successfully fabricated through careful mechanical polishing of high-quality EuB$_{6}$ single crystals. The reduced thickness, temperature and magnetic field have a strong influence on the electronic transport properties, including the CNMR and carrier concentration of EuB$_{6}$ thin sheets. As the thickness of EuB$_{6}$ thin sheets decreases from 180 μm to 35 μm, the magnetization transition temperature and the corresponding suppressing temperature of the Kondo effect decrease from 15.2 K to 10.9 K, while the CNMR ratio increases from $-87.2%$ to $-90.8%$. Furthermore, the weak antilocalization effect transits to a weak localization effect and the carrier concentration increases by 9.4% at 30 K in a 35 μm EuB$_{6}$ thin sheet compared to the value reported for a 180 μm thin sheet. Our findings demonstrate an obvious tunable effect of the reduced dimensionality on the transport properties of EuB$_{6}$ along with the temperature and magnetic field, which could provide a route to exploring the QAHE near the 2D limit in EuB$_{6}$ and other topological semimetals.

关键词: EuB$_{6}$ thin sheets, magnetic topological semimetal, negative magnetoresistance, Kondo effect, weak localization

Abstract: EuB$_{6}$, a magnetic topological semimetal, has attracted considerable attention in recent years due to its rich intriguing physical properties, including a colossal negative magnetoresistance (CNMR) ratio exceeding $-80%$, a topological phase transition and a predicted quantum anomalous Hall effect (QAHE) approaching the two-dimensional (2D) limit. Yet, studies of the influence of the dimensionality approaching 2D on the electronic transport properties of EuB$_{6}$ are still scarce. In this work, EuB$_{6}$ thin sheets with thicknesses ranging from 35 μm to 180 μm were successfully fabricated through careful mechanical polishing of high-quality EuB$_{6}$ single crystals. The reduced thickness, temperature and magnetic field have a strong influence on the electronic transport properties, including the CNMR and carrier concentration of EuB$_{6}$ thin sheets. As the thickness of EuB$_{6}$ thin sheets decreases from 180 μm to 35 μm, the magnetization transition temperature and the corresponding suppressing temperature of the Kondo effect decrease from 15.2 K to 10.9 K, while the CNMR ratio increases from $-87.2%$ to $-90.8%$. Furthermore, the weak antilocalization effect transits to a weak localization effect and the carrier concentration increases by 9.4% at 30 K in a 35 μm EuB$_{6}$ thin sheet compared to the value reported for a 180 μm thin sheet. Our findings demonstrate an obvious tunable effect of the reduced dimensionality on the transport properties of EuB$_{6}$ along with the temperature and magnetic field, which could provide a route to exploring the QAHE near the 2D limit in EuB$_{6}$ and other topological semimetals.

Key words: EuB$_{6}$ thin sheets, magnetic topological semimetal, negative magnetoresistance, Kondo effect, weak localization

中图分类号:  (Electronic transport in mesoscopic systems)

  • 73.23.-b