中国物理B ›› 2024, Vol. 33 ›› Issue (9): 98102-098102.doi: 10.1088/1674-1056/ad5aec

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Diamond-based electron emission: Structure, properties and mechanisms

Liang-Xue Gu(顾梁雪), Kai Yang(杨凯), Yan Teng(滕妍), Wei-Kang Zhao(赵伟康), Geng-You Zhao(赵耕右), Kang-Kang Fan(凡康康), Bo Feng(冯博), Rong Zhang(张荣), You-Dou Zheng(郑有炓), Jian-Dong Ye(叶建东), Shun-Ming Zhu(朱顺明), Kun Tang(汤琨)†, and Shu-Lin Gu(顾书林)‡   

  1. School of Electronic Science and Engineering, Nanjing University, Nanjing 210046, China
  • 收稿日期:2024-04-11 修回日期:2024-06-06 接受日期:2024-06-24 出版日期:2024-08-15 发布日期:2024-08-15
  • 通讯作者: Kun Tang, Shu-Lin Gu E-mail:ktang@nju.edu.cn;slgu@nju.edu.cn
  • 基金资助:
    This work was supported by the National Natural Science Foundation of China (Grant No. 62274084) and the Fundamental Research Funds for the Central Universities (Grant No. 0210-14380193).

Diamond-based electron emission: Structure, properties and mechanisms

Liang-Xue Gu(顾梁雪), Kai Yang(杨凯), Yan Teng(滕妍), Wei-Kang Zhao(赵伟康), Geng-You Zhao(赵耕右), Kang-Kang Fan(凡康康), Bo Feng(冯博), Rong Zhang(张荣), You-Dou Zheng(郑有炓), Jian-Dong Ye(叶建东), Shun-Ming Zhu(朱顺明), Kun Tang(汤琨)†, and Shu-Lin Gu(顾书林)‡   

  1. School of Electronic Science and Engineering, Nanjing University, Nanjing 210046, China
  • Received:2024-04-11 Revised:2024-06-06 Accepted:2024-06-24 Online:2024-08-15 Published:2024-08-15
  • Contact: Kun Tang, Shu-Lin Gu E-mail:ktang@nju.edu.cn;slgu@nju.edu.cn
  • Supported by:
    This work was supported by the National Natural Science Foundation of China (Grant No. 62274084) and the Fundamental Research Funds for the Central Universities (Grant No. 0210-14380193).

摘要: Diamond has an ultrawide bandgap with excellent physical properties, such as high critical electric field, excellent thermal conductivity, high carrier mobility, etc. Diamond with a hydrogen-terminated (H-terminated) surface has a negative electron affinity (NEA) and can easily produce surface electrons from valence or trapped electrons via optical absorption, thermal heating energy or carrier transport in a PN junction. The NEA of the H-terminated surface enables surface electrons to emit with high efficiency into the vacuum without encountering additional barriers and promotes further development and application of diamond-based emitting devices. This article reviews the electron emission properties of H-terminated diamond surfaces exhibiting NEA characteristics. The electron emission is induced by different physical mechanisms. Recent advancements in electron-emitting devices based on diamond are also summarized. Finally, the current challenges and future development opportunities are discussed to further develop the relevant applications of diamond-based electron-emitting devices.

关键词: diamond, negative electron affinity (NEA), PN junction, electron emission

Abstract: Diamond has an ultrawide bandgap with excellent physical properties, such as high critical electric field, excellent thermal conductivity, high carrier mobility, etc. Diamond with a hydrogen-terminated (H-terminated) surface has a negative electron affinity (NEA) and can easily produce surface electrons from valence or trapped electrons via optical absorption, thermal heating energy or carrier transport in a PN junction. The NEA of the H-terminated surface enables surface electrons to emit with high efficiency into the vacuum without encountering additional barriers and promotes further development and application of diamond-based emitting devices. This article reviews the electron emission properties of H-terminated diamond surfaces exhibiting NEA characteristics. The electron emission is induced by different physical mechanisms. Recent advancements in electron-emitting devices based on diamond are also summarized. Finally, the current challenges and future development opportunities are discussed to further develop the relevant applications of diamond-based electron-emitting devices.

Key words: diamond, negative electron affinity (NEA), PN junction, electron emission

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
81.05.ug (Diamond) 07.30.Bx (Degasification, residual gas) 07.30.Kf (Vacuum chambers, auxiliary apparatus, and materials)