中国物理B ›› 2024, Vol. 33 ›› Issue (6): 66401-066401.doi: 10.1088/1674-1056/ad362c

• • 上一篇    下一篇

Pressure-induced magnetic phase and structural transition in SmSb2

Tao Li(李涛)1,2, Shuyang Wang(王舒阳)2,†, Xuliang Chen(陈绪亮)1,2, Chunhua Chen(陈春华)2, Yong Fang(房勇)3, and Zhaorong Yang(杨昭荣)1,2,4,5,‡   

  1. 1 Science Island Branch of Graduate School, University of Science and Technology of China, Hefei 230026, China;
    2 Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China;
    3 Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500, China;
    4 Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China;
    5 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • 收稿日期:2024-02-06 修回日期:2024-03-19 接受日期:2024-03-21 出版日期:2024-06-18 发布日期:2024-06-18
  • 通讯作者: Shuyang Wang, Zhaorong Yang E-mail:sywang@hmfl.ac.cn;zryang@issp.ac.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2023YFA1406102 and 2022YFA1602603), the National Natural Science Foundation of China (Grant Nos. 12374049 and 12174395), the China Postdoctoral Science Foundation (Grant No. 2023M743542), Hefei Institutes of Physical Science, Chinese Academy of Sciences the Director’s Fundation of (Grant No. YZJJ2024QN41), and the Basic Research Program of the Chinese Academy of Sciences Based on Major Scientific Infrastructures (Grant No. JZHKYPT-2021-08).

Pressure-induced magnetic phase and structural transition in SmSb2

Tao Li(李涛)1,2, Shuyang Wang(王舒阳)2,†, Xuliang Chen(陈绪亮)1,2, Chunhua Chen(陈春华)2, Yong Fang(房勇)3, and Zhaorong Yang(杨昭荣)1,2,4,5,‡   

  1. 1 Science Island Branch of Graduate School, University of Science and Technology of China, Hefei 230026, China;
    2 Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China;
    3 Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500, China;
    4 Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China;
    5 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • Received:2024-02-06 Revised:2024-03-19 Accepted:2024-03-21 Online:2024-06-18 Published:2024-06-18
  • Contact: Shuyang Wang, Zhaorong Yang E-mail:sywang@hmfl.ac.cn;zryang@issp.ac.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2023YFA1406102 and 2022YFA1602603), the National Natural Science Foundation of China (Grant Nos. 12374049 and 12174395), the China Postdoctoral Science Foundation (Grant No. 2023M743542), Hefei Institutes of Physical Science, Chinese Academy of Sciences the Director’s Fundation of (Grant No. YZJJ2024QN41), and the Basic Research Program of the Chinese Academy of Sciences Based on Major Scientific Infrastructures (Grant No. JZHKYPT-2021-08).

摘要: Motivated by the recent discovery of unconventional superconductivity around a magnetic quantum critical point in pressurized CeSb$_{2}$, here we present a high-pressure study of an isostructural antiferromagnetic (AFM) SmSb$_{2}$ through electrical transport and synchrotron x-ray diffraction measurements. At $P_{\rm C} \sim 2.5 $GPa, we found a pressure-induced magnetic phase transition accompanied by a Cmca, $\to P$4nmm structural phase transition. In the pristine AFM phase below $P_{\rm C}$, the AFM transition temperature of SmSb$_{2}$ is insensitive to pressure; in the emergent magnetic phase above $P_{\rm C}$, however, the magnetic critical temperature increases rapidly with increasing pressure. In addition, at ambient pressure, the magnetoresistivity (MR) of SmSb$_{2}$ increases suddenly upon cooling below the AFM transition temperature and presents linear nonsaturating behavior under high field at 2K. With increasing pressure above $P_{\rm C}$, the MR behavior remains similar to that observed at ambient pressure, both in terms of temperature- and field-dependent MR. This leads us to argue an AFM-like state for SmSb$_{2}$ above $P_{\rm C}$. Within the investigated pressure of up to 45.3GPa and the temperature of down to 1.8K, we found no signature of superconductivity in SmSb$_{2}$.

关键词: high pressure, antiferromagnet, magnetoresistivity, structural transition

Abstract: Motivated by the recent discovery of unconventional superconductivity around a magnetic quantum critical point in pressurized CeSb$_{2}$, here we present a high-pressure study of an isostructural antiferromagnetic (AFM) SmSb$_{2}$ through electrical transport and synchrotron x-ray diffraction measurements. At $P_{\rm C} \sim 2.5 $GPa, we found a pressure-induced magnetic phase transition accompanied by a Cmca, $\to P$4nmm structural phase transition. In the pristine AFM phase below $P_{\rm C}$, the AFM transition temperature of SmSb$_{2}$ is insensitive to pressure; in the emergent magnetic phase above $P_{\rm C}$, however, the magnetic critical temperature increases rapidly with increasing pressure. In addition, at ambient pressure, the magnetoresistivity (MR) of SmSb$_{2}$ increases suddenly upon cooling below the AFM transition temperature and presents linear nonsaturating behavior under high field at 2K. With increasing pressure above $P_{\rm C}$, the MR behavior remains similar to that observed at ambient pressure, both in terms of temperature- and field-dependent MR. This leads us to argue an AFM-like state for SmSb$_{2}$ above $P_{\rm C}$. Within the investigated pressure of up to 45.3GPa and the temperature of down to 1.8K, we found no signature of superconductivity in SmSb$_{2}$.

Key words: high pressure, antiferromagnet, magnetoresistivity, structural transition

中图分类号:  (Solid-solid transitions)

  • 64.70.K
47.80.Fg (Pressure and temperature measurements) 61.50.Ks (Crystallographic aspects of phase transformations; pressure effects) 81.40.Vw (Pressure treatment)