Angular and planar transport properties of antiferromagnetic V5S8

doi:10.1088/1674-1056/ad15f9

中国物理B ›› 2024, Vol. 33 ›› Issue (2): 27503-027503.doi: 10.1088/1674-1056/ad15f9

Angular and planar transport properties of antiferromagnetic V₅S₈

Xiao-Kai Wu(吴晓凯)¹, Bin Wang(王彬)¹, De-Tong Wu(吴德桐)¹, Bo-Wen Chen(陈博文)¹, Meng-Juan Mi(弭孟娟)², Yi-Lin Wang(王以林)², and Bing Shen(沈冰)^1,†

1 Center for Neutron Science and Technology and School of Physics, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, and Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China;
2 School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

收稿日期:2023-11-16 修回日期:2023-12-12 接受日期:2023-12-15 出版日期:2024-01-16 发布日期:2024-01-19
通讯作者: Bing Shen E-mail:shenbing@mail.sysu.edu.cn
基金资助:
Project supported by the open research fund of Songshan Lake Materials Laboratory (Grant No. 2021SLABFN11), the National Natural Science Foundation of China (Grant Nos. U2130101 and 92165204), Natural Science Foundation of Guangdong Province (Grant No. 2022A1515010035), Guangzhou Basic and Applied Basic Research Foundation (Grant No. 202201011798), the Open Project of Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices (Grant No. 2022B1212010008), the Open Project of Key Laboratory of Optoelectronic Materials and Technologies (Grant No. OEMT-2023-ZTS-01), the National Key R&D Program of China (Grant Nos. 2023YFF0718400 and 2023YFA1406500), and (national) college students innovation and entrepreneurship training program, Sun Yat-sen University (Grant No. 202310359).

Angular and planar transport properties of antiferromagnetic V₅S₈

Xiao-Kai Wu(吴晓凯)¹, Bin Wang(王彬)¹, De-Tong Wu(吴德桐)¹, Bo-Wen Chen(陈博文)¹, Meng-Juan Mi(弭孟娟)², Yi-Lin Wang(王以林)², and Bing Shen(沈冰)^1,†

1 Center for Neutron Science and Technology and School of Physics, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, and Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China;
2 School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Received:2023-11-16 Revised:2023-12-12 Accepted:2023-12-15 Online:2024-01-16 Published:2024-01-19
Contact: Bing Shen E-mail:shenbing@mail.sysu.edu.cn
Supported by:
Project supported by the open research fund of Songshan Lake Materials Laboratory (Grant No. 2021SLABFN11), the National Natural Science Foundation of China (Grant Nos. U2130101 and 92165204), Natural Science Foundation of Guangdong Province (Grant No. 2022A1515010035), Guangzhou Basic and Applied Basic Research Foundation (Grant No. 202201011798), the Open Project of Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices (Grant No. 2022B1212010008), the Open Project of Key Laboratory of Optoelectronic Materials and Technologies (Grant No. OEMT-2023-ZTS-01), the National Key R&D Program of China (Grant Nos. 2023YFF0718400 and 2023YFA1406500), and (national) college students innovation and entrepreneurship training program, Sun Yat-sen University (Grant No. 202310359).

摘要/Abstract

摘要： Systemically angular and planar transport investigations are performed in layered antiferromagnetic (AF) V₅S₈. In this AF system, obvious anomalous Hall effect (AHE) is observed with a large Hall angle of 0.1 compared to that in ferromagnetic (FM) system. It can persist to the temperatures above AF transition and exhibit strong angular field dependence. The phase diagram reveals various magnetic states by rotating the applied field. By analyzing the anisotropic transport behavior, magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing line. The observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent oscillations. These behaviors are attributed to the scattering from spin-orbital coupling instead of nontrivial topological origin. Our results reveal anisotropic interactions of magnetism and electron in V₅S₈, suggesting potential opportunities for the AF spintronic sensor and devices.

关键词: antiferromagnetism, planar Hall effect, magnetic and topological properties

Abstract: Systemically angular and planar transport investigations are performed in layered antiferromagnetic (AF) V₅S₈. In this AF system, obvious anomalous Hall effect (AHE) is observed with a large Hall angle of 0.1 compared to that in ferromagnetic (FM) system. It can persist to the temperatures above AF transition and exhibit strong angular field dependence. The phase diagram reveals various magnetic states by rotating the applied field. By analyzing the anisotropic transport behavior, magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing line. The observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent oscillations. These behaviors are attributed to the scattering from spin-orbital coupling instead of nontrivial topological origin. Our results reveal anisotropic interactions of magnetism and electron in V₅S₈, suggesting potential opportunities for the AF spintronic sensor and devices.

Key words: antiferromagnetism, planar Hall effect, magnetic and topological properties

中图分类号: (Metals and alloys)

75.20.En

Xiao-Kai Wu(吴晓凯), Bin Wang(王彬), De-Tong Wu(吴德桐), Bo-Wen Chen(陈博文), Meng-Juan Mi(弭孟娟), Yi-Lin Wang(王以林), and Bing Shen(沈冰). Angular and planar transport properties of antiferromagnetic V₅S₈[J]. 中国物理B, 2024, 33(2): 27503-027503.

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Angular and planar transport properties of antiferromagnetic V₅S₈

Angular and planar transport properties of antiferromagnetic V₅S₈

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