中国物理B ›› 2022, Vol. 31 ›› Issue (9): 97502-097502.doi: 10.1088/1674-1056/ac523e

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Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures

Wenyu Huang(黄文宇)1, Cangmin Wang(王藏敏)1, Yichao Liu(刘艺超)1, Shaoting Wang(王绍庭)2, Weifeng Ge(葛威锋)1, Huaili Qiu(仇怀利)1, Yuanjun Yang(杨远俊)1,†, Ting Zhang(张霆)1,‡, Hui Zhang(张汇)3, and Chen Gao(高琛)4   

  1. 1 School of Physics, Hefei University of Technology, Hefei 230009, China;
    2 School of Microelectronics, Hefei University of Technology, Hefei 230009, China;
    3 Hefei National Laboratory for Physical Sciences at Microscale(HFNL), University of Science and Technology of China, Hefei 230026, China;
    4 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2021-11-16 修回日期:2022-01-11 接受日期:2022-02-07 出版日期:2022-08-19 发布日期:2022-08-24
  • 通讯作者: Yuanjun Yang, Ting Zhang E-mail:yangyuanjun@hfut.edu.cn;zhangting@hfut.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52072102 and 11775224). It was also partially funded through the Open Foundation of the Hefei National Laboratory for Physical Sciences at the Microscale (Grant No. KF2020002). The authors greatly appreciate the beamlines BL07W, BL11U and BL12B-α at the National Synchrotron Radiation Laboratory (Grant No. NSRL) for multiferroic device fabrication and characterization. In particular, the authors would like to sincerely thank Xiao's group for providing MTJ samples.

Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures

Wenyu Huang(黄文宇)1, Cangmin Wang(王藏敏)1, Yichao Liu(刘艺超)1, Shaoting Wang(王绍庭)2, Weifeng Ge(葛威锋)1, Huaili Qiu(仇怀利)1, Yuanjun Yang(杨远俊)1,†, Ting Zhang(张霆)1,‡, Hui Zhang(张汇)3, and Chen Gao(高琛)4   

  1. 1 School of Physics, Hefei University of Technology, Hefei 230009, China;
    2 School of Microelectronics, Hefei University of Technology, Hefei 230009, China;
    3 Hefei National Laboratory for Physical Sciences at Microscale(HFNL), University of Science and Technology of China, Hefei 230026, China;
    4 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2021-11-16 Revised:2022-01-11 Accepted:2022-02-07 Online:2022-08-19 Published:2022-08-24
  • Contact: Yuanjun Yang, Ting Zhang E-mail:yangyuanjun@hfut.edu.cn;zhangting@hfut.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52072102 and 11775224). It was also partially funded through the Open Foundation of the Hefei National Laboratory for Physical Sciences at the Microscale (Grant No. KF2020002). The authors greatly appreciate the beamlines BL07W, BL11U and BL12B-α at the National Synchrotron Radiation Laboratory (Grant No. NSRL) for multiferroic device fabrication and characterization. In particular, the authors would like to sincerely thank Xiao's group for providing MTJ samples.

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摘要： Because of the wide selectivity of ferromagnetic and ferroelectric (FE) components, electric-field (E-field) control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures. Here, an MgO-based magnetic tunnel junction (MTJ) is chosen rationally as the ferromagnetic constitution and a high-activity (001)-Pb(Mg$_{1/3}$Nb$_{2/3}$)$_{0.7}$Ti$_{0.3}$O$_{3}$ (PMN-0.3PT) single crystal is selected as the FE component to create a multiferroic MTJ/FE hybrid structure. The shape of tunneling magnetoresistance (TMR) versus in situ E-fields imprints the butterfly loop of the piezo-strain of the FE without magnetic-field bias. The E-field-controlled change in the TMR ratio is up to $-$0.27% without magnetic-field bias. Moreover, when a typical magnetic field ($\sim \pm 10$ Oe) is applied along the minor axis of the MTJ, the butterfly loop is changed significantly by the E-fields relative to that without magnetic-field bias. This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ. In addition, based on such a multiferroic heterostructure, a strain-gauge factor up to approximately 40 is achieved, which decreases further with a sign change from positive to negative with increasing magnetic fields. This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature.

关键词: tunneling magnetoresistance, magnetic tunnel junction (MTJ), multiferroic heterostructure, magnetoelectric coupling

Abstract: Because of the wide selectivity of ferromagnetic and ferroelectric (FE) components, electric-field (E-field) control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures. Here, an MgO-based magnetic tunnel junction (MTJ) is chosen rationally as the ferromagnetic constitution and a high-activity (001)-Pb(Mg$_{1/3}$Nb$_{2/3}$)$_{0.7}$Ti$_{0.3}$O$_{3}$ (PMN-0.3PT) single crystal is selected as the FE component to create a multiferroic MTJ/FE hybrid structure. The shape of tunneling magnetoresistance (TMR) versus in situ E-fields imprints the butterfly loop of the piezo-strain of the FE without magnetic-field bias. The E-field-controlled change in the TMR ratio is up to $-$0.27% without magnetic-field bias. Moreover, when a typical magnetic field ($\sim \pm 10$ Oe) is applied along the minor axis of the MTJ, the butterfly loop is changed significantly by the E-fields relative to that without magnetic-field bias. This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ. In addition, based on such a multiferroic heterostructure, a strain-gauge factor up to approximately 40 is achieved, which decreases further with a sign change from positive to negative with increasing magnetic fields. This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature.

Key words: tunneling magnetoresistance, magnetic tunnel junction (MTJ), multiferroic heterostructure, magnetoelectric coupling

中图分类号:  (Magnetoelectric effects, multiferroics)

  • 75.85.+t
77.55.Nv (Multiferroic/magnetoelectric films) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields) 75.47.-m (Magnetotransport phenomena; materials for magnetotransport)