Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions

doi:10.1088/1674-1056/ab5d02

中国物理B ›› 2020, Vol. 29 ›› Issue (1): 17303-017303.doi: 10.1088/1674-1056/ab5d02

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions

Yan-Qi Li(李彦琪), Hong-Jun Kan(阚洪君), Yuan-Yuan Miao(苗圆圆), Lei Yang(杨磊), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), Gui-Chao Hu(胡贵超)

Shandong Province Key Laboratory of Medical Physics and Image Processing Technology, School of Physics and Electronics, Shandong Normal University, Jinan 250100, China

收稿日期:2019-10-03 修回日期:2019-11-13 出版日期:2020-01-05 发布日期:2020-01-05
通讯作者: Gui-Chao Hu E-mail:hgc@sdnu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11974215, 11704230, 11674197, and 11874242), the Natural Science Foundation of Shandong Province, China (Grant No. ZR2019MA043), and the Taishan Scholar Project of Shandong Province, China.

Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions

Shandong Province Key Laboratory of Medical Physics and Image Processing Technology, School of Physics and Electronics, Shandong Normal University, Jinan 250100, China

Received:2019-10-03 Revised:2019-11-13 Online:2020-01-05 Published:2020-01-05
Contact: Gui-Chao Hu E-mail:hgc@sdnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11974215, 11704230, 11674197, and 11874242), the Natural Science Foundation of Shandong Province, China (Grant No. ZR2019MA043), and the Taishan Scholar Project of Shandong Province, China.

摘要/Abstract

摘要： Spin-dependent transport in ferromagnet/organic-ferromagnet/metal junctions is investigated theoretically. The results reveal a large tunneling magnetoresistance up to 3230% by controlling the relative magnetization orientation between the ferromagnet and the central organic ferromagnet. The mechanism is explained by distinct efficient spin-resolved tunneling states in the ferromagnet between the parallel and antiparallel spin configurations. The key role of the organic ferromagnet in generating the large magnetoresistance is explored, where the spin selection effect is found to enlarge the difference of the tunneling states between the parallel and antiparallel configurations by comparing with the conventional organic spin valves. The effects of intrinsic interactions in the organic ferromagnet including electron-lattice interaction and spin coupling with radicals on the magnetoresistance are discussed. This work demonstrates a promising potential of organic ferromagnets in the design of high-performance organic spin valves.

关键词: organic ferromagnet, organic spintronics, tunneling magnetoresistance

Abstract: Spin-dependent transport in ferromagnet/organic-ferromagnet/metal junctions is investigated theoretically. The results reveal a large tunneling magnetoresistance up to 3230% by controlling the relative magnetization orientation between the ferromagnet and the central organic ferromagnet. The mechanism is explained by distinct efficient spin-resolved tunneling states in the ferromagnet between the parallel and antiparallel spin configurations. The key role of the organic ferromagnet in generating the large magnetoresistance is explored, where the spin selection effect is found to enlarge the difference of the tunneling states between the parallel and antiparallel configurations by comparing with the conventional organic spin valves. The effects of intrinsic interactions in the organic ferromagnet including electron-lattice interaction and spin coupling with radicals on the magnetoresistance are discussed. This work demonstrates a promising potential of organic ferromagnets in the design of high-performance organic spin valves.

Key words: organic ferromagnet, organic spintronics, tunneling magnetoresistance

中图分类号: (Electronic transport in nanoscale materials and structures)

73.63.-b

75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

李彦琪, 阚洪君, 苗圆圆, 杨磊, 邱帅, 张广平, 任俊峰, 王传奎, 胡贵超. Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions[J]. 中国物理B, 2020, 29(1): 17303-017303.

Yan-Qi Li(李彦琪), Hong-Jun Kan(阚洪君), Yuan-Yuan Miao(苗圆圆), Lei Yang(杨磊), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), Gui-Chao Hu(胡贵超). Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions[J]. Chin. Phys. B, 2020, 29(1): 17303-017303.

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