From microelectronics to spintronics and magnonics

doi:10.1088/1674-1056/ac9048

中国物理B ›› 2022, Vol. 31 ›› Issue (11): 117504-117504.doi: 10.1088/1674-1056/ac9048

所属专题： TOPICAL REVIEW — Celebrating 30 Years of Chinese Physics B

From microelectronics to spintronics and magnonics

Xiu-Feng Han(韩秀峰)^†, Cai-Hua Wan(万蔡华), Hao Wu(吴昊), Chen-Yang Guo(郭晨阳), Ping Tang(唐萍), Zheng-Ren Yan(严政人), Yao-Wen Xing(邢耀文), Wen-Qing He(何文卿), and Guo-Qiang Yu(于国强)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2022-06-18 修回日期:2022-09-02 接受日期:2022-09-08 出版日期:2022-10-17 发布日期:2022-11-03
通讯作者: Xiu-Feng Han E-mail:xfhan@iphy.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grants No. 2017YFA0206200), the National Natural Science Foundation of China (Grant Nos. 51831012 and 12134107), and the Beijing Natural Science Foundation (Grant No. Z201100004220006).

From microelectronics to spintronics and magnonics

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China

Received:2022-06-18 Revised:2022-09-02 Accepted:2022-09-08 Online:2022-10-17 Published:2022-11-03
Contact: Xiu-Feng Han E-mail:xfhan@iphy.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grants No. 2017YFA0206200), the National Natural Science Foundation of China (Grant Nos. 51831012 and 12134107), and the Beijing Natural Science Foundation (Grant No. Z201100004220006).

摘要/Abstract

摘要： In this review, the recent developments in microelectronics, spintronics, and magnonics have been summarized and compared. Firstly, the history of the spintronics has been briefly reviewed. Moreover, the recent development of magnonics such as magnon-mediated current drag effect (MCDE), magnon valve effect (MVE), magnon junction effect (MJE), magnon blocking effect (MBE), magnon-mediated nonlocal spin Hall magnetoresistance (MNSMR), magnon-transfer torque (MTT) effect, and magnon resonant tunneling (MRT) effect, magnon skin effect (MSE), etc., existing in magnon junctions or magnon heterojunctions, have been summarized and their potential applications in memory and logic devices, etc., are prospected, from which we can see a promising future for spintronics and magnonics beyond micro-electronics.

关键词: magnon valve effect, magnon junction effect, magnon resonant tunneling effect, magnon-transfer torque effect

Abstract: In this review, the recent developments in microelectronics, spintronics, and magnonics have been summarized and compared. Firstly, the history of the spintronics has been briefly reviewed. Moreover, the recent development of magnonics such as magnon-mediated current drag effect (MCDE), magnon valve effect (MVE), magnon junction effect (MJE), magnon blocking effect (MBE), magnon-mediated nonlocal spin Hall magnetoresistance (MNSMR), magnon-transfer torque (MTT) effect, and magnon resonant tunneling (MRT) effect, magnon skin effect (MSE), etc., existing in magnon junctions or magnon heterojunctions, have been summarized and their potential applications in memory and logic devices, etc., are prospected, from which we can see a promising future for spintronics and magnonics beyond micro-electronics.

Key words: magnon valve effect, magnon junction effect, magnon resonant tunneling effect, magnon-transfer torque effect

中图分类号: (Magnetotransport phenomena; materials for magnetotransport)

75.47.-m

75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures)) 75.76.+j (Spin transport effects)

Xiu-Feng Han(韩秀峰), Cai-Hua Wan(万蔡华), Hao Wu(吴昊), Chen-Yang Guo(郭晨阳), Ping Tang(唐萍), Zheng-Ren Yan(严政人), Yao-Wen Xing(邢耀文), Wen-Qing He(何文卿), and Guo-Qiang Yu(于国强). From microelectronics to spintronics and magnonics[J]. 中国物理B, 2022, 31(11): 117504-117504.

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From microelectronics to spintronics and magnonics

From microelectronics to spintronics and magnonics

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