Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance

doi:10.1088/1674-1056/abe372

中国物理B ›› 2021, Vol. 30 ›› Issue (7): 78503-078503.doi: 10.1088/1674-1056/abe372

Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance

Hui-Fang Xu(许会芳)^†, Wen Sun(孙雯), and Na Wang(王娜)

Institute of Electrical and Electronic Engineering, Anhui Science and Technology University, Fengyang 233100, China

收稿日期:2020-11-28 修回日期:2021-01-11 接受日期:2021-02-05 出版日期:2021-06-22 发布日期:2021-06-22
通讯作者: Hui-Fang Xu E-mail:xu0342@163.com
基金资助:
Project supported by the University Natural Science Research Key Project of Anhui Province (Grant No. KJ2020A0075) and Excellent Talents Supported Project of Colleges and Universities (Grant No. gxyq2018048).

Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance

Hui-Fang Xu(许会芳)^†, Wen Sun(孙雯), and Na Wang(王娜)

Institute of Electrical and Electronic Engineering, Anhui Science and Technology University, Fengyang 233100, China

Received:2020-11-28 Revised:2021-01-11 Accepted:2021-02-05 Online:2021-06-22 Published:2021-06-22
Contact: Hui-Fang Xu E-mail:xu0342@163.com
Supported by:
Project supported by the University Natural Science Research Key Project of Anhui Province (Grant No. KJ2020A0075) and Excellent Talents Supported Project of Colleges and Universities (Grant No. gxyq2018048).

摘要/Abstract

摘要： The various advantages of extended-source (ES), broken gate (BG), and hetero-gate-dielectric (HGD) technology are blended together for the proposed tunnel field-effect transistor (ESBG TFET) in order to enhance the direct-current and analog/radio-frequency performance. The source of the ESBG TFET is extended into channel for the purpose of increasing the point and line tunneling in the device at the tunneling junction, and then, the on-state current for the ESBG TFET increases. The influence of the source region length on the direct-current and radio-frequency performance parameters of the ESBG TFET is analyzed in detail. The results show that the proposed TFET exhibits a high on-state current to off-state current ratio of 10¹³, large transconductance of 1200 μS/μm, high cut-off frequency of 72.8 GHz, and high gain bandwidth product of 14.3 GHz. Apart from these parameters, the ESBG TFET also demonstrates high linearity distortion parameters in terms of the second- and third-order voltage intercept points, the third-order input interception point, and the third-order intermodulation distortion. Therefore, the ESBG TFET greatly promotes the application potential of conventional TFETs.

关键词: extended-source, broken gate, radio-frequency performances, tunnel field-effect transistor

Abstract: The various advantages of extended-source (ES), broken gate (BG), and hetero-gate-dielectric (HGD) technology are blended together for the proposed tunnel field-effect transistor (ESBG TFET) in order to enhance the direct-current and analog/radio-frequency performance. The source of the ESBG TFET is extended into channel for the purpose of increasing the point and line tunneling in the device at the tunneling junction, and then, the on-state current for the ESBG TFET increases. The influence of the source region length on the direct-current and radio-frequency performance parameters of the ESBG TFET is analyzed in detail. The results show that the proposed TFET exhibits a high on-state current to off-state current ratio of 10¹³, large transconductance of 1200 μS/μm, high cut-off frequency of 72.8 GHz, and high gain bandwidth product of 14.3 GHz. Apart from these parameters, the ESBG TFET also demonstrates high linearity distortion parameters in terms of the second- and third-order voltage intercept points, the third-order input interception point, and the third-order intermodulation distortion. Therefore, the ESBG TFET greatly promotes the application potential of conventional TFETs.

Key words: extended-source, broken gate, radio-frequency performances, tunnel field-effect transistor

中图分类号: (Junction breakdown and tunneling devices (including resonance tunneling devices))

85.30.Mn

81.05.Ea (III-V semiconductors) 85.30.Tv (Field effect devices)

Hui-Fang Xu(许会芳), Wen Sun(孙雯), and Na Wang(王娜). Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance[J]. 中国物理B, 2021, 30(7): 78503-078503.

Hui-Fang Xu(许会芳), Wen Sun(孙雯), and Na Wang(王娜). Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance[J]. Chin. Phys. B, 2021, 30(7): 78503-078503.

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Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance

Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance

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