中国物理B ›› 2021, Vol. 30 ›› Issue (12): 127701-127701.doi: 10.1088/1674-1056/ac01c4

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Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors

Yuan-Yuan Zhang(张元元)1,2, Xiao-Qing Sun(孙晓清)1,2, Jun-Shuai Chai(柴俊帅)1,2,†, Hao Xu(徐昊)1,2, Xue-Li Ma(马雪丽)1,2, Jin-Juan Xiang(项金娟)1,2, Kai Han(韩锴)3, Xiao-Lei Wang(王晓磊)1,2,‡, and Wen-Wu Wang(王文武)1,2   

  1. 1 Key Laboratory of Microelectronics & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 College of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Department of Physics and Electronic Science, Weifang University, Weifang 261061, China
  • 收稿日期:2021-05-09 修回日期:2021-05-13 接受日期:2021-05-16 出版日期:2021-11-15 发布日期:2021-11-25
  • 通讯作者: Jun-Shuai Chai, Xiao-Lei Wang E-mail:chaijunshuai@ime.ac.cn;wangxiaolei@ime.ac.cn
  • 基金资助:
    Project supported by the National Key Project of Science and Technology of China (Grant No. 2017ZX02315001-002).

Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors

Yuan-Yuan Zhang(张元元)1,2, Xiao-Qing Sun(孙晓清)1,2, Jun-Shuai Chai(柴俊帅)1,2,†, Hao Xu(徐昊)1,2, Xue-Li Ma(马雪丽)1,2, Jin-Juan Xiang(项金娟)1,2, Kai Han(韩锴)3, Xiao-Lei Wang(王晓磊)1,2,‡, and Wen-Wu Wang(王文武)1,2   

  1. 1 Key Laboratory of Microelectronics & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 College of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Department of Physics and Electronic Science, Weifang University, Weifang 261061, China
  • Received:2021-05-09 Revised:2021-05-13 Accepted:2021-05-16 Online:2021-11-15 Published:2021-11-25
  • Contact: Jun-Shuai Chai, Xiao-Lei Wang E-mail:chaijunshuai@ime.ac.cn;wangxiaolei@ime.ac.cn
  • Supported by:
    Project supported by the National Key Project of Science and Technology of China (Grant No. 2017ZX02315001-002).

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摘要： We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO2 (HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experimental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit. Our results show that the thermodynamic coefficients α, β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor. Moreover, the smaller coefficients α and β, the more significant the transient NC effect. In addition, we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization.

关键词: transient negative capacitance (NC), ferroelectric, hafnium-zirconium oxide

Abstract: We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO2 (HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experimental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit. Our results show that the thermodynamic coefficients α, β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor. Moreover, the smaller coefficients α and β, the more significant the transient NC effect. In addition, we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization.

Key words: transient negative capacitance (NC), ferroelectric, hafnium-zirconium oxide

中图分类号:  (Ferroelectricity and antiferroelectricity)

  • 77.80.-e
85.50.-n (Dielectric, ferroelectric, and piezoelectric devices) 77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials) 85.30.Tv (Field effect devices)