中国物理B ›› 2020, Vol. 29 ›› Issue (6): 67601-067601.doi: 10.1088/1674-1056/ab8dac

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of interface magnetization depinning on the frequency shift of ferromagnetic and spin wave resonance in YIG/GGG films

Fanqing Lin(林凡庆), Shouheng Zhang(张守珩), Guoxia Zhao(赵国霞), Hongfei Li(李洪飞), Weihua Zong(宗卫华), Shandong Li(李山东)   

  1. 1 College of Physics, Center for Marine Observation and Communications, Qingdao University, Qingdao 266071, China;
    2 School of Electronics and Information, Qingdao University, Qingdao 266071, China
  • 收稿日期:2020-03-30 修回日期:2020-04-22 出版日期:2020-06-05 发布日期:2020-06-05
  • 通讯作者: Shandong Li E-mail:lishd@qdu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11674187 and 51871127) and Technology on Electronic Test & Measurement Laboratory (Grant No. 6142001180103).

Effect of interface magnetization depinning on the frequency shift of ferromagnetic and spin wave resonance in YIG/GGG films

Fanqing Lin(林凡庆)1, Shouheng Zhang(张守珩)1, Guoxia Zhao(赵国霞)1, Hongfei Li(李洪飞)2, Weihua Zong(宗卫华)2, Shandong Li(李山东)1   

  1. 1 College of Physics, Center for Marine Observation and Communications, Qingdao University, Qingdao 266071, China;
    2 School of Electronics and Information, Qingdao University, Qingdao 266071, China
  • Received:2020-03-30 Revised:2020-04-22 Online:2020-06-05 Published:2020-06-05
  • Contact: Shandong Li E-mail:lishd@qdu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11674187 and 51871127) and Technology on Electronic Test & Measurement Laboratory (Grant No. 6142001180103).

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摘要： Nowadays the yttrium iron garnet (Y3Fe5O12, YIG) films are widely used in the microwave and spin wave devices due to their low damping constant and long propagation distance for spin waves. However, the performances, especially the frequency stability, are seriously affected by the relaxation of the interface magnetic moments. In this study, the effect of out-of-plane magnetization depinning on the resonance frequency shift (Δfr) was investigated for 3-μm YIG films grown on Gd3Ga5O12 (GGG) (111) substrates by liquid-phase epitaxy. It is revealed that the ferromagnetic resonance (FMR) and spin wave propagation exhibit a very slow relaxation with relaxation time τ even longer than one hour under an out-of-plane external magnetic bias field. The Δfr span of 15.15-24.70 MHz is observed in out-of-plane FMR and forward volume spin waves. Moreover, the Δfr and τ depend on the magnetic field. The Δfr can be attributed to that the magnetic moments break away from the pinning layer at the YIG/GGG interface. The thickness of the pinning layer is estimated to be about 9.48 nm to 15.46 nm according to the frequency shifting. These results indicate that Δfr caused by the pinning layer should be addressed in the design of microwave and spin wave devices, especially in the transverse magnetic components.

关键词: yttrium iron garnet (YIG), magnetization relaxation, ferromagnetic resonance, spin waves

Abstract: Nowadays the yttrium iron garnet (Y3Fe5O12, YIG) films are widely used in the microwave and spin wave devices due to their low damping constant and long propagation distance for spin waves. However, the performances, especially the frequency stability, are seriously affected by the relaxation of the interface magnetic moments. In this study, the effect of out-of-plane magnetization depinning on the resonance frequency shift (Δfr) was investigated for 3-μm YIG films grown on Gd3Ga5O12 (GGG) (111) substrates by liquid-phase epitaxy. It is revealed that the ferromagnetic resonance (FMR) and spin wave propagation exhibit a very slow relaxation with relaxation time τ even longer than one hour under an out-of-plane external magnetic bias field. The Δfr span of 15.15-24.70 MHz is observed in out-of-plane FMR and forward volume spin waves. Moreover, the Δfr and τ depend on the magnetic field. The Δfr can be attributed to that the magnetic moments break away from the pinning layer at the YIG/GGG interface. The thickness of the pinning layer is estimated to be about 9.48 nm to 15.46 nm according to the frequency shifting. These results indicate that Δfr caused by the pinning layer should be addressed in the design of microwave and spin wave devices, especially in the transverse magnetic components.

Key words: yttrium iron garnet (YIG), magnetization relaxation, ferromagnetic resonance, spin waves

中图分类号:  (Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance)

  • 76.50.+g
85.70.Ge (Ferrite and garnet devices) 75.10.Hk (Classical spin models) 75.25.-j (Spin arrangements in magnetically ordered materials (including neutron And spin-polarized electron studies, synchrotron-source x-ray scattering, etc.))