中国物理B ›› 2019, Vol. 28 ›› Issue (6): 67201-067201.doi: 10.1088/1674-1056/28/6/067201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Magnetotransport properties of graphene layers decorated with colloid quantum dots

Ri-Jia Zhu(朱日佳), Yu-Qing Huang(黄雨青), Jia-Yu Li(李佳玉), Ning Kang(康宁), Hong-Qi Xu(徐洪起)   

  1. 1 School of Physics, Dalian University of Technology, Dalian 116024, China;
    2 Beijing Key Laboratory of Quantum Devices, Key Laboratory for Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China;
    3 Division of Solid State Physics, Lund University, P. O. Box 118, S-22100 Lund, Sweden
  • 收稿日期:2019-01-31 修回日期:2019-04-08 出版日期:2019-06-05 发布日期:2019-06-05
  • 通讯作者: Ning Kang, Hong-Qi Xu E-mail:nkang@pku.edu.cn;hqxu@pku.edu.cn
  • 基金资助:

    Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFA0300601 and 2017YFA0303304) and the National Natural Science Foundation of China (Grant Nos. 11774005, 11874071, 91221202, and 91421303).

Magnetotransport properties of graphene layers decorated with colloid quantum dots

Ri-Jia Zhu(朱日佳)1,2, Yu-Qing Huang(黄雨青)2, Jia-Yu Li(李佳玉)2, Ning Kang(康宁)2, Hong-Qi Xu(徐洪起)1,2,3   

  1. 1 School of Physics, Dalian University of Technology, Dalian 116024, China;
    2 Beijing Key Laboratory of Quantum Devices, Key Laboratory for Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China;
    3 Division of Solid State Physics, Lund University, P. O. Box 118, S-22100 Lund, Sweden
  • Received:2019-01-31 Revised:2019-04-08 Online:2019-06-05 Published:2019-06-05
  • Contact: Ning Kang, Hong-Qi Xu E-mail:nkang@pku.edu.cn;hqxu@pku.edu.cn
  • Supported by:

    Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFA0300601 and 2017YFA0303304) and the National Natural Science Foundation of China (Grant Nos. 11774005, 11874071, 91221202, and 91421303).

摘要:

The hybrid graphene-quantum dot devices can potentially be used to tailor the electronic, optical, and chemical properties of graphene. Here, the low temperature electronic transport properties of bilayer graphene decorated with PbS colloid quantum dots (CQDs) have been investigated in the weak or strong magnetic fields. The presence of the CQDs introduces additional scattering potentials that alter the magnetotransport properties of the graphene layers, leading to the observation of a new set of magnetoconductance oscillations near zero magnetic field as well as the high-field quantum Hall regime. The results bring about a new strategy for exploring the quantum interference effects in two-dimensional materials which are sensitive to the surrounding electrostatic environment, and open up a new gateway for exploring the graphene sensing with quantum interference effects.

关键词: graphene, colloid quantum dots, quantum Hall effect, Aharonov-Bohm oscillations

Abstract:

The hybrid graphene-quantum dot devices can potentially be used to tailor the electronic, optical, and chemical properties of graphene. Here, the low temperature electronic transport properties of bilayer graphene decorated with PbS colloid quantum dots (CQDs) have been investigated in the weak or strong magnetic fields. The presence of the CQDs introduces additional scattering potentials that alter the magnetotransport properties of the graphene layers, leading to the observation of a new set of magnetoconductance oscillations near zero magnetic field as well as the high-field quantum Hall regime. The results bring about a new strategy for exploring the quantum interference effects in two-dimensional materials which are sensitive to the surrounding electrostatic environment, and open up a new gateway for exploring the graphene sensing with quantum interference effects.

Key words: graphene, colloid quantum dots, quantum Hall effect, Aharonov-Bohm oscillations

中图分类号:  (Electronic transport in graphene)

  • 72.80.Vp
73.21.La (Quantum dots) 73.23.-b (Electronic transport in mesoscopic systems) 73.50.-h (Electronic transport phenomena in thin films)