Simulation of a-Si: H/c-Si heterojunction solar cells: From planar junction to local junction

doi:10.1088/1674-1056/ab5212

中国物理B ›› 2019, Vol. 28 ›› Issue (12): 128503-128503.doi: 10.1088/1674-1056/ab5212

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Simulation of a-Si: H/c-Si heterojunction solar cells: From planar junction to local junction

Haibin Huang(黄海宾), Lang Zhou(周浪), Jiren Yuan(袁吉仁), Zhijue Quan(全知觉)

1 Institute of Photovoltaics, Nanchang University, Nanchang 330031, China;
2 Department of Physics, Nanchang University, Nanchang 330031, China;
3 National Institute of LED on Si Substrate, Nanchang University, Nanchang 330096, China

收稿日期:2019-09-08 修回日期:2019-10-13 出版日期:2019-12-05 发布日期:2019-12-05
通讯作者: Lang Zhou, Jiren Yuan E-mail:lzhou@ncu.edu.cn;yuanjiren@ncu.edu.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2018YFB1500403), the National Natural Science Foundation of China (Grant Nos. 11964018, 61741404, and 61464007), and the Natural Science Foundation of Jiangxi Province of China (Grant No. 20181BAB202027).

Simulation of a-Si: H/c-Si heterojunction solar cells: From planar junction to local junction

Haibin Huang(黄海宾)¹, Lang Zhou(周浪)¹, Jiren Yuan(袁吉仁)^1,2, Zhijue Quan(全知觉)³

1 Institute of Photovoltaics, Nanchang University, Nanchang 330031, China;
2 Department of Physics, Nanchang University, Nanchang 330031, China;
3 National Institute of LED on Si Substrate, Nanchang University, Nanchang 330096, China

Received:2019-09-08 Revised:2019-10-13 Online:2019-12-05 Published:2019-12-05
Contact: Lang Zhou, Jiren Yuan E-mail:lzhou@ncu.edu.cn;yuanjiren@ncu.edu.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2018YFB1500403), the National Natural Science Foundation of China (Grant Nos. 11964018, 61741404, and 61464007), and the Natural Science Foundation of Jiangxi Province of China (Grant No. 20181BAB202027).

摘要/Abstract

摘要： In order to obtain higher conversion efficiency and to reduce production cost for hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) based heterojunction solar cells, an a-Si:H/c-Si heterojunction with localized p-n structure (HACL) is designed. A numerical simulation is performed with the ATLAS program. The effect of the a-Si:H layer on the performance of the HIT (heterojunction with intrinsic thin film) solar cell is investigated. The performance improvement mechanism for the HACL cell is explored. The potential performance of the HACL solar cell is compared with those of the HIT and HACD (heterojunction of amorphous silicon and crystalline silicon with diffused junction) solar cells. The simulated results indicate that the a-Si:H layer can bring about much absorption loss. The conversion efficiency and the short-circuit current density of the HACL cell can reach 28.18% and 43.06 mA/cm², respectively, and are higher than those of the HIT and HACD solar cells. The great improvement are attributed to (1) decrease of optical absorption loss of a-Si:H and (2) decrease of photocarrier recombination for the HACL cell. The double-side local junction is very suitable for the bifacial solar cells. For an HACL cell with n-type or p-type c-Si base, all n-type or p-type c-Si passivating layers are feasible for convenience of the double-side diffusion process. Moreover, the HACL structure can reduce the consumption of rare materials since the transparent conductive oxide (TCO) can be free in this structure. It is concluded that the HACL solar cell is a promising structure for high efficiency and low cost.

关键词: silicon solar cell, a-Si:H/c-Si heterojunction, short-circuit current, local junction

Abstract: In order to obtain higher conversion efficiency and to reduce production cost for hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) based heterojunction solar cells, an a-Si:H/c-Si heterojunction with localized p-n structure (HACL) is designed. A numerical simulation is performed with the ATLAS program. The effect of the a-Si:H layer on the performance of the HIT (heterojunction with intrinsic thin film) solar cell is investigated. The performance improvement mechanism for the HACL cell is explored. The potential performance of the HACL solar cell is compared with those of the HIT and HACD (heterojunction of amorphous silicon and crystalline silicon with diffused junction) solar cells. The simulated results indicate that the a-Si:H layer can bring about much absorption loss. The conversion efficiency and the short-circuit current density of the HACL cell can reach 28.18% and 43.06 mA/cm², respectively, and are higher than those of the HIT and HACD solar cells. The great improvement are attributed to (1) decrease of optical absorption loss of a-Si:H and (2) decrease of photocarrier recombination for the HACL cell. The double-side local junction is very suitable for the bifacial solar cells. For an HACL cell with n-type or p-type c-Si base, all n-type or p-type c-Si passivating layers are feasible for convenience of the double-side diffusion process. Moreover, the HACL structure can reduce the consumption of rare materials since the transparent conductive oxide (TCO) can be free in this structure. It is concluded that the HACL solar cell is a promising structure for high efficiency and low cost.

Key words: silicon solar cell, a-Si:H/c-Si heterojunction, short-circuit current, local junction

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

88.30.gg (Design and simulation) 85.60.Gz (Photodetectors (including infrared and CCD detectors))

黄海宾, 周浪, 袁吉仁, 全知觉. Simulation of a-Si: H/c-Si heterojunction solar cells: From planar junction to local junction[J]. 中国物理B, 2019, 28(12): 128503-128503.

Haibin Huang(黄海宾), Lang Zhou(周浪), Jiren Yuan(袁吉仁), Zhijue Quan(全知觉). Simulation of a-Si: H/c-Si heterojunction solar cells: From planar junction to local junction[J]. Chin. Phys. B, 2019, 28(12): 128503-128503.

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Simulation of a-Si: H/c-Si heterojunction solar cells: From planar junction to local junction

Simulation of a-Si: H/c-Si heterojunction solar cells: From planar junction to local junction

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