中国物理B ›› 2011, Vol. 20 ›› Issue (9): 97103-097103.doi: 10.1088/1674-1056/20/9/097103

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Detailed balance limit efficiency of silicon intermediate band solar cells

曹权, 马志华, 薛春来, 左玉华, 王启明   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2011-03-01 修回日期:2011-05-12 出版日期:2011-09-15 发布日期:2011-09-15

Detailed balance limit efficiency of silicon intermediate band solar cells

Cao Quan(曹权), Ma Zhi-Hua(马志华), Xue Chun-Lai(薛春来),Zuo Yu-Hua(左玉华)†, and Wang Qi-Ming(王启明)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • Received:2011-03-01 Revised:2011-05-12 Online:2011-09-15 Published:2011-09-15

PDF (PC)

2264

赞

摘要： The detailed balance method is used to study the potential of the intermediate band solar cell (IBSC), which can improve the efficiency of the Si-based solar cell with a bandgap between 1.1 eV to 1.7 eV. It shows that a crystalline silicon solar cell with an intermediate band located at 0.36 eV below the conduction band or above the valence band can reach a limiting efficiency of 54% at the maximum light concentration, improving greatly than 40.7% of the Shockley—Queisser limit for the single junction Si solar cell. The simulation also shows that the limiting efficiency of the silicon-based solar cell increases as the bandgap increases from 1.1 eV to 1.7 eV, and the amorphous Si solar cell with a bandgap of 1.7 eV exhibits a radiative limiting efficiency of 62.47%, having a better potential.

Abstract: The detailed balance method is used to study the potential of the intermediate band solar cell (IBSC), which can improve the efficiency of the Si-based solar cell with a bandgap between 1.1 eV to 1.7 eV. It shows that a crystalline silicon solar cell with an intermediate band located at 0.36 eV below the conduction band or above the valence band can reach a limiting efficiency of 54% at the maximum light concentration, improving greatly than 40.7% of the Shockley—Queisser limit for the single junction Si solar cell. The simulation also shows that the limiting efficiency of the silicon-based solar cell increases as the bandgap increases from 1.1 eV to 1.7 eV, and the amorphous Si solar cell with a bandgap of 1.7 eV exhibits a radiative limiting efficiency of 62.47%, having a better potential.

Key words: intermediate band, silicon solar cell, concentrated light, detailed balance principle

中图分类号:  (Narrow-band systems; intermediate-valence solids)

  • 71.28.+d
71.55.-i (Impurity and defect levels) 84.60.Jt (Photoelectric conversion)