中国物理B ›› 2019, Vol. 28 ›› Issue (11): 117802-117802.doi: 10.1088/1674-1056/ab4576

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Visible-to-near-infrared photodetector based on graphene-MoTe2-graphene heterostructure

Rui-Xue Hu(户瑞雪), Xin-Li Ma(马新莉), Chun-Ha An(安春华), Jing Liu(刘晶)   

  1. State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
  • 收稿日期:2019-05-30 修回日期:2019-07-25 出版日期:2019-11-05 发布日期:2019-11-05
  • 通讯作者: Jing Liu E-mail:jingliu_1112@tju.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 21405109) and the Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China (Pilt No. 1710).

Visible-to-near-infrared photodetector based on graphene-MoTe2-graphene heterostructure

Rui-Xue Hu(户瑞雪), Xin-Li Ma(马新莉), Chun-Ha An(安春华), Jing Liu(刘晶)   

  1. State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
  • Received:2019-05-30 Revised:2019-07-25 Online:2019-11-05 Published:2019-11-05
  • Contact: Jing Liu E-mail:jingliu_1112@tju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 21405109) and the Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China (Pilt No. 1710).

摘要: Graphene and transition metal dichalcogenides (TMDs), two-dimensional materials, have been investigated wildely in recent years. As a member of the TMD family, MoTe2 possesses a suitable bandgap of~1.0 eV for near infrared (NIR) photodetection. Here we stack the MoTe2 flake with two graphene flakes of high carrier mobility to form a graphene-MoTe2-graphene heterostructure. It exhibits high photo-response to a broad spectrum range from 500 nm to 1300 nm. The photoresponsivity is calculated to be 1.6 A/W for the 750-nm light under 2 V/0 V drain-source/gate bias, and 154 mA/W for the 1100-nm light under 0.5 V/60 V drain-source/gate bias. Besides, the polarity of the photocurrent under zero Vds can be efficiently tuned by the back gate voltage to satisfy different applications. Finally, we fabricate a vertical graphene-MoTe2-graphene heterostructure which shows improved photoresponsivity of 3.3 A/W to visible light.

关键词: two-dimensional materials, van der Waals heterostructure, transition metal dichalcogenides (TMDs), graphene, photodetector

Abstract: Graphene and transition metal dichalcogenides (TMDs), two-dimensional materials, have been investigated wildely in recent years. As a member of the TMD family, MoTe2 possesses a suitable bandgap of~1.0 eV for near infrared (NIR) photodetection. Here we stack the MoTe2 flake with two graphene flakes of high carrier mobility to form a graphene-MoTe2-graphene heterostructure. It exhibits high photo-response to a broad spectrum range from 500 nm to 1300 nm. The photoresponsivity is calculated to be 1.6 A/W for the 750-nm light under 2 V/0 V drain-source/gate bias, and 154 mA/W for the 1100-nm light under 0.5 V/60 V drain-source/gate bias. Besides, the polarity of the photocurrent under zero Vds can be efficiently tuned by the back gate voltage to satisfy different applications. Finally, we fabricate a vertical graphene-MoTe2-graphene heterostructure which shows improved photoresponsivity of 3.3 A/W to visible light.

Key words: two-dimensional materials, van der Waals heterostructure, transition metal dichalcogenides (TMDs), graphene, photodetector

中图分类号:  (Electro-optical effects)

  • 78.20.Jq
42.79.Hp (Optical processors, correlators, and modulators) 42.70.Gi (Light-sensitive materials)