Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor

doi:10.1088/1674-1056/ab43bb

中国物理B ›› 2019, Vol. 28 ›› Issue (11): 117201-117201.doi: 10.1088/1674-1056/ab43bb

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor

Yu Guo(郭玉), Gang-Qiang Zha(查钢强), Ying-Rui Li(李颖锐), Ting-Ting Tan(谭婷婷), Hao Zhu(朱昊), Sen Wu(吴森)

MIIT Key Laboratory of Radiation Detection Materials and Devices, State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University(NWPU), Xi'an 710072, China

收稿日期:2019-06-24 修回日期:2019-09-05 出版日期:2019-11-05 发布日期:2019-11-05
通讯作者: Gang-Qiang Zha E-mail:zha_gq@nwpu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61874089), the Fund of MIIT (Grant No. MJ-2017-F-05), the 111 Project of China (Grant No. B08040), the NPU Foundation for Fundamental Research, China, and the Research Found of the State Key Laboratory of Solidification Processing (NWPU), China.

Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor

Yu Guo(郭玉), Gang-Qiang Zha(查钢强), Ying-Rui Li(李颖锐), Ting-Ting Tan(谭婷婷), Hao Zhu(朱昊), Sen Wu(吴森)

MIIT Key Laboratory of Radiation Detection Materials and Devices, State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University(NWPU), Xi'an 710072, China

Received:2019-06-24 Revised:2019-09-05 Online:2019-11-05 Published:2019-11-05
Contact: Gang-Qiang Zha E-mail:zha_gq@nwpu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61874089), the Fund of MIIT (Grant No. MJ-2017-F-05), the 111 Project of China (Grant No. B08040), the NPU Foundation for Fundamental Research, China, and the Research Found of the State Key Laboratory of Solidification Processing (NWPU), China.

摘要/Abstract

摘要： The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped carriers; the perturbation of electric field due to drifting carriers has been rarely reported. In this study, the effect of transient space-charge perturbation on carrier transport in a CdZnTe semiconductor is evaluated by using the laser-beam-induced current (LBIC) technique. Cusps appear in the current curves of CdZnTe detectors with different carrier transport performances under intense excitation, indicating the deformation of electric field. The current signals under different excitations are compared. The results suggest that with the increase of excitation, the amplitude of cusp increases and the electron transient time gradually decreases. The distortion in electric field is independent of carrier transport performance of detector. Transient space-charge perturbation is responsible for the pulse shape and affects the carrier transport process.

关键词: CdZnTe, transient space-charge perturbation, laser-beam-induced current (LBIC) technique, carrier transport

Abstract: The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped carriers; the perturbation of electric field due to drifting carriers has been rarely reported. In this study, the effect of transient space-charge perturbation on carrier transport in a CdZnTe semiconductor is evaluated by using the laser-beam-induced current (LBIC) technique. Cusps appear in the current curves of CdZnTe detectors with different carrier transport performances under intense excitation, indicating the deformation of electric field. The current signals under different excitations are compared. The results suggest that with the increase of excitation, the amplitude of cusp increases and the electron transient time gradually decreases. The distortion in electric field is independent of carrier transport performance of detector. Transient space-charge perturbation is responsible for the pulse shape and affects the carrier transport process.

Key words: CdZnTe, transient space-charge perturbation, laser-beam-induced current (LBIC) technique, carrier transport

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 73.61.Ga (II-VI semiconductors) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)

郭玉, 查钢强, 李颖锐, 谭婷婷, 朱昊, 吴森. Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor[J]. 中国物理B, 2019, 28(11): 117201-117201.

Yu Guo(郭玉), Gang-Qiang Zha(查钢强), Ying-Rui Li(李颖锐), Ting-Ting Tan(谭婷婷), Hao Zhu(朱昊), Sen Wu(吴森). Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor[J]. Chin. Phys. B, 2019, 28(11): 117201-117201.

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Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor

Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor

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