Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance

doi:10.1088/1674-1056/ab3a8b

中国物理B ›› 2019, Vol. 28 ›› Issue (10): 108501-108501.doi: 10.1088/1674-1056/ab3a8b

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance

Hui-Fang Xu(许会芳), Jian Cui(崔健), Wen Sun(孙雯), Xin-Feng Han(韩新风)

Institute of Electrical and Electronic Engineering, Anhui Science and Technology University, Fengyang 233100, China

收稿日期:2019-01-05 修回日期:2019-07-25 出版日期:2019-10-05 发布日期:2019-10-05
通讯作者: Hui-Fang Xu E-mail:xu0342@163.com
基金资助:
Project supported by the University Natural Science Research Key Project of Anhui Province, China (Grant No. KJ2017A502), the Introduced Talent Project of Anhui Science and Technology University, China (Grant No. DQYJ201603), the Excellent Talents Supporting Project of Colleges and Universities, China (Grant No. gxyq2018048), and the Innovation and Entrepreneurship Training Program for College Students, China (Grant No. 2018S10879052).

Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance

Hui-Fang Xu(许会芳), Jian Cui(崔健), Wen Sun(孙雯), Xin-Feng Han(韩新风)

Institute of Electrical and Electronic Engineering, Anhui Science and Technology University, Fengyang 233100, China

Received:2019-01-05 Revised:2019-07-25 Online:2019-10-05 Published:2019-10-05
Contact: Hui-Fang Xu E-mail:xu0342@163.com
Supported by:
Project supported by the University Natural Science Research Key Project of Anhui Province, China (Grant No. KJ2017A502), the Introduced Talent Project of Anhui Science and Technology University, China (Grant No. DQYJ201603), the Excellent Talents Supporting Project of Colleges and Universities, China (Grant No. gxyq2018048), and the Innovation and Entrepreneurship Training Program for College Students, China (Grant No. 2018S10879052).

摘要/Abstract

摘要： A tunnel field-effect transistor (TFET) is proposed by combining various advantages together, such as non-uniform gate-oxide layer, hetero-gate-dielectric (HGD), and dual-material control-gate (DMCG) technology. The effects of the length of non-uniform gate-oxide layer and dual-material control-gate on the on-state, off-state, and ambipolar currents are investigated. In addition, radio-frequency performance is studied in terms of gain bandwidth product, cut-off frequency, transit time, and transconductance frequency product. Moreover, the length of non-uniform gate-oxide layer and dual-material control-gate are optimized to improve the on-off current ratio and radio-frequency performances as well as the suppression of ambipolar current. All results demonstrate that the proposed device not only suppresses ambipolar current but also improves radio-frequency performance compared with the conventional DMCG TFET, which makes the proposed device a better application prospect in the advanced integrated circuits.

关键词: non-uniform gate-oxide layer, ambipolar current, radio-frequency performances, tunnel field-effect transistor

Abstract: A tunnel field-effect transistor (TFET) is proposed by combining various advantages together, such as non-uniform gate-oxide layer, hetero-gate-dielectric (HGD), and dual-material control-gate (DMCG) technology. The effects of the length of non-uniform gate-oxide layer and dual-material control-gate on the on-state, off-state, and ambipolar currents are investigated. In addition, radio-frequency performance is studied in terms of gain bandwidth product, cut-off frequency, transit time, and transconductance frequency product. Moreover, the length of non-uniform gate-oxide layer and dual-material control-gate are optimized to improve the on-off current ratio and radio-frequency performances as well as the suppression of ambipolar current. All results demonstrate that the proposed device not only suppresses ambipolar current but also improves radio-frequency performance compared with the conventional DMCG TFET, which makes the proposed device a better application prospect in the advanced integrated circuits.

Key words: non-uniform gate-oxide layer, ambipolar current, radio-frequency performances, tunnel field-effect transistor

中图分类号: (Junction breakdown and tunneling devices (including resonance tunneling devices))

85.30.Mn

81.05.Ea (III-V semiconductors) 85.30.Tv (Field effect devices)

许会芳, 崔健, 孙雯, 韩新风. Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance[J]. 中国物理B, 2019, 28(10): 108501-108501.

Hui-Fang Xu(许会芳), Jian Cui(崔健), Wen Sun(孙雯), Xin-Feng Han(韩新风). Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance[J]. Chin. Phys. B, 2019, 28(10): 108501-108501.

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Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance

Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance

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