中国物理B ›› 2019, Vol. 28 ›› Issue (1): 16101-016101.doi: 10.1088/1674-1056/28/1/016101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Photoluminescence of SiV centers in CVD diamond particles with specific crystallographic planes

Ying-Shuang Mei(梅盈爽), Cheng-Ke Chen(陈成克), Mei-Yan Jiang(蒋梅燕), Xiao Li(李晓), Yin-Lan Ruan(阮银兰), Xiao-Jun Hu(胡晓君)   

  1. 1 College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China;
    2 ARC Centre of Excellence in Nanoscale Biophotonics, Institute of Photonics and Advanced Sensing, University of Adelaide, Adelaide 5005, Australia
  • 收稿日期:2018-08-03 修回日期:2018-10-17 出版日期:2019-01-05 发布日期:2019-01-05
  • 通讯作者: Xiao-Jun Hu E-mail:huxj@zjut.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 50972129 and 50602039), the International Science Technology Cooperation Program of China (Grant No. 2014DFR51160), the National Key Research and Development Program of China (Grant No. 2016YFE0133200), European Union's Horizon 2020 Research and Innovation Staff Exchange (RISE) Scheme (Grant No. 734578), One Belt and One Road International Cooperation Project from Key Research and Development Program of Zhejiang Province, China (Grant No. 2018C04021), and the Natural Science Foundation of Zhejiang Province, China (Grant No. LY18E020013).

Photoluminescence of SiV centers in CVD diamond particles with specific crystallographic planes

Ying-Shuang Mei(梅盈爽)1, Cheng-Ke Chen(陈成克)1, Mei-Yan Jiang(蒋梅燕)1, Xiao Li(李晓)1, Yin-Lan Ruan(阮银兰)2, Xiao-Jun Hu(胡晓君)1   

  1. 1 College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China;
    2 ARC Centre of Excellence in Nanoscale Biophotonics, Institute of Photonics and Advanced Sensing, University of Adelaide, Adelaide 5005, Australia
  • Received:2018-08-03 Revised:2018-10-17 Online:2019-01-05 Published:2019-01-05
  • Contact: Xiao-Jun Hu E-mail:huxj@zjut.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 50972129 and 50602039), the International Science Technology Cooperation Program of China (Grant No. 2014DFR51160), the National Key Research and Development Program of China (Grant No. 2016YFE0133200), European Union's Horizon 2020 Research and Innovation Staff Exchange (RISE) Scheme (Grant No. 734578), One Belt and One Road International Cooperation Project from Key Research and Development Program of Zhejiang Province, China (Grant No. 2018C04021), and the Natural Science Foundation of Zhejiang Province, China (Grant No. LY18E020013).

RichHTML

0

PDF (PC)

181

赞

摘要：

We prepared the isolated micrometer-sized diamond particles without seeding on the substrate in hot filament chemical vapor deposition. The diamond particles with specific crystallographic planes and strong silicon-vacancy (SiV) photoluminescence (PL) have been prepared by adjusting the growth pressure. As the growth pressure increases from 2.5 to 3.5 kPa, the diamond particles transit from composite planes of {100} and {111} to only smooth {111} planes. The {111}-faceted diamond particles present better crystal quality and stronger normalized intensity of SiV PL with a narrower bandwidth of 5 nm. Raman depth profiles show that the SiV centers are more likely to be formed on the near-surface areas of the diamond particles, which have poorer crystal quality and greater lattice stress than the inner areas. Complex lattice stress environment in the near-surface areas broadens the bandwidth of SiV PL peak. These results provide a feasible method to prepare diamond particles with specific crystallographic planes and stronger SiV PL.

关键词: diamond particle, SiV center, photoluminescence, crystallographic planes

Abstract:

We prepared the isolated micrometer-sized diamond particles without seeding on the substrate in hot filament chemical vapor deposition. The diamond particles with specific crystallographic planes and strong silicon-vacancy (SiV) photoluminescence (PL) have been prepared by adjusting the growth pressure. As the growth pressure increases from 2.5 to 3.5 kPa, the diamond particles transit from composite planes of {100} and {111} to only smooth {111} planes. The {111}-faceted diamond particles present better crystal quality and stronger normalized intensity of SiV PL with a narrower bandwidth of 5 nm. Raman depth profiles show that the SiV centers are more likely to be formed on the near-surface areas of the diamond particles, which have poorer crystal quality and greater lattice stress than the inner areas. Complex lattice stress environment in the near-surface areas broadens the bandwidth of SiV PL peak. These results provide a feasible method to prepare diamond particles with specific crystallographic planes and stronger SiV PL.

Key words: diamond particle, SiV center, photoluminescence, crystallographic planes

中图分类号:  (Color centers)

  • 61.72.jn
78.20.-e (Optical properties of bulk materials and thin films) 81.05.ug (Diamond)