Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

doi:10.1088/1674-1056/27/2/027104

中国物理B ›› 2018, Vol. 27 ›› Issue (2): 27104-027104.doi: 10.1088/1674-1056/27/2/027104

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

Hao-Nan Liu(刘浩男), Xiao-Xia Suo(索晓霞), Lin-Ao Zhang(张林奥), Duan Zhang(张端), Han-Chun Wu(吴汉春), Hong-Kang Zhao(赵宏康), Zhao-Tan Jiang(江兆潭), Ying-Lan Li(李英兰), Zhi Wang(王志)

1. School of Physics, Beijing Institute of Technology, Beijing 100081, China;
2. Elementary Educational College, Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University, Beijing 100048, China

收稿日期:2017-08-28 修回日期:2017-11-13 出版日期:2018-02-05 发布日期:2018-02-05
通讯作者: Zhi Wang E-mail:wangzhi@bit.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51002010 and 11274040).

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

Hao-Nan Liu(刘浩男)¹, Xiao-Xia Suo(索晓霞)¹, Lin-Ao Zhang(张林奥)¹, Duan Zhang(张端)², Han-Chun Wu(吴汉春)¹, Hong-Kang Zhao(赵宏康)¹, Zhao-Tan Jiang(江兆潭)¹, Ying-Lan Li(李英兰)¹, Zhi Wang(王志)¹

1. School of Physics, Beijing Institute of Technology, Beijing 100081, China;
2. Elementary Educational College, Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University, Beijing 100048, China

Received:2017-08-28 Revised:2017-11-13 Online:2018-02-05 Published:2018-02-05
Contact: Zhi Wang E-mail:wangzhi@bit.edu.cn
About author:71.55.Gs; 73.40.Sx; 68.65.Pq; 68.65.Ac
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51002010 and 11274040).

摘要/Abstract

摘要： ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.

关键词: resistive switching, ZnO, graphene, multilayer thin films

Abstract: ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.

Key words: resistive switching, ZnO, graphene, multilayer thin films

中图分类号: (II-VI semiconductors)

71.55.Gs

73.40.Sx (Metal-semiconductor-metal structures) 68.65.Pq (Graphene films) 68.65.Ac (Multilayers)

刘浩男, 索晓霞, 张林奥, 张端, 吴汉春, 赵宏康, 江兆潭, 李英兰, 王志. Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures[J]. 中国物理B, 2018, 27(2): 27104-027104.

Hao-Nan Liu(刘浩男), Xiao-Xia Suo(索晓霞), Lin-Ao Zhang(张林奥), Duan Zhang(张端), Han-Chun Wu(吴汉春), Hong-Kang Zhao(赵宏康), Zhao-Tan Jiang(江兆潭), Ying-Lan Li(李英兰), Zhi Wang(王志). Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures[J]. Chin. Phys. B, 2018, 27(2): 27104-027104.

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Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

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