Review of improved spectral response of ultraviolet photodetectors by surface plasmon

doi:10.1088/1674-1056/27/12/126101

中国物理B ›› 2018, Vol. 27 ›› Issue (12): 126101-126101.doi: 10.1088/1674-1056/27/12/126101

所属专题： TOPICAL REVIEW — Photodetector: Materials, physics, and applications

• TOPICAL REVIEW—Photodetector: materials, physics, and applications • 上一篇下一篇

Review of improved spectral response of ultraviolet photodetectors by surface plasmon

You Wu(吴忧), Xiao-Juan Sun(孙晓娟), Yu-Ping Jia(贾玉萍), Da-Bing Li(黎大兵)

1 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2018-08-27 修回日期:2018-09-25 出版日期:2018-12-05 发布日期:2018-12-05
通讯作者: Xiao-Juan Sun, Da-Bing Li E-mail:sunxj@ciomp.ac.cn;lidb@ciomp.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400904), the National Natural Science Foundation for Distinguished Young Scholars, China (Grant No. 61725403), the National Natural Science Foundation of China (Grant Nos. 61574142, 61322406, 61704171, and 11705206), the Key Program of International Partnership Program of the Chinese Academy of Sciences (Grant No. 181722KYSB20160015), the Special Project for Inter-government Collaboration of State Key Research and Development Program, China (Grant No. 2016YFE0118400), the Science and Technology Service Network Initiative of the Chinese Academy of Sciences, the Jilin Provincial Science & Technology Department, China (Grant No. 20180201026GX), the Interdisciplinary Innovation Team of the Chinese Academy of Sciences, and the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2015171).

Review of improved spectral response of ultraviolet photodetectors by surface plasmon

You Wu(吴忧)^1,2, Xiao-Juan Sun(孙晓娟)¹, Yu-Ping Jia(贾玉萍)¹, Da-Bing Li(黎大兵)¹

1 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2018-08-27 Revised:2018-09-25 Online:2018-12-05 Published:2018-12-05
Contact: Xiao-Juan Sun, Da-Bing Li E-mail:sunxj@ciomp.ac.cn;lidb@ciomp.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400904), the National Natural Science Foundation for Distinguished Young Scholars, China (Grant No. 61725403), the National Natural Science Foundation of China (Grant Nos. 61574142, 61322406, 61704171, and 11705206), the Key Program of International Partnership Program of the Chinese Academy of Sciences (Grant No. 181722KYSB20160015), the Special Project for Inter-government Collaboration of State Key Research and Development Program, China (Grant No. 2016YFE0118400), the Science and Technology Service Network Initiative of the Chinese Academy of Sciences, the Jilin Provincial Science & Technology Department, China (Grant No. 20180201026GX), the Interdisciplinary Innovation Team of the Chinese Academy of Sciences, and the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2015171).

摘要/Abstract

摘要：

Ultraviolet (UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many researches have been done on the semiconductors based UV detectors and some kinds of detectors have been made, such as metal-semiconductor-metal (MSM), Schottky, and PIN-type detectors. However, the sensitivity values of those detectors are still far from the expectation. Recent years, surface plasmon (SP) has been considered to be an effective way to enhance the sensitivity of semiconductor based UV photodetector. When the light is matched with the resonance frequency of surface plasmon, the localized field enhancement or scattering effect will happen and thus the spectral response will be enhanced. Here, we present an overview of surface plasmon enhancing the performance of UV detectors, including the GaN, ZnO, and other wide band gap semiconductor UV detectors. Both fundamental and experimental achievements are contained in this review.

关键词: detectors, surface plasmonic, GaN, ultraviolet

Abstract:

Key words: detectors, surface plasmonic, GaN, ultraviolet

中图分类号: (III-V and II-VI semiconductors)

61.72.uj

85.60.Gz (Photodetectors (including infrared and CCD detectors)) 52.40.Fd (Plasma interactions with antennas; plasma-filled waveguides)

吴忧, 孙晓娟, 贾玉萍, 黎大兵. Review of improved spectral response of ultraviolet photodetectors by surface plasmon[J]. 中国物理B, 2018, 27(12): 126101-126101.

You Wu(吴忧), Xiao-Juan Sun(孙晓娟), Yu-Ping Jia(贾玉萍), Da-Bing Li(黎大兵). Review of improved spectral response of ultraviolet photodetectors by surface plasmon[J]. Chin. Phys. B, 2018, 27(12): 126101-126101.

参考文献 58

[1]	Razeghi M and Rogalski A 1996 J. Appl. Phys. 79 7433 doi: 10.1063/1.362677
[2]	Razeghi M 2002 Proc. IEEE 90 1006 doi: 10.1109/JPROC.2002.1021565
[3]	Muñoz E 2007 Phys. Stat. Sol. (b) 244 2859
[4]	Sajjad M, Jadwisienczak W M and Feng P 2014 Nanoscale 6 4577 doi: 10.1039/C3NR05817D
[5]	Atalla M, Jiang Z Y, Liu J, Wang L, Ashok S and Xu J 2015 J. Appl. Phys. 117 134503 doi: 10.1063/1.4916782
[6]	Walker D, Monroy E, Kung P, Wu J, Hamilton M, Sanchez F J, Diaz J and Razeghi M 1999 Appl. Phys. Lett. 74 762 doi: 10.1063/1.123303
[7]	Butun B, Tut T, Ulker E, Yelboga T and Ozbay E 2008 Appl. Phys. Lett. 92 033507 doi: 10.1063/1.2837645
[8]	Li D B, Jiang K, Sun X J and Guo C L 2018 Adv. Opt. Photon. 10 43 doi: 10.1364/AOP.10.000043
[9]	Stockman M I 2011 Phys. Today 64 39
[10]	Wood R W 1902 Proc. Phys. Soc. London 18 269 doi: 10.1088/1478-7814/18/1/325
[11]	Folge V 1904 Ann. Phys. 318 857 doi: 10.1002/andp.18943180502
[12]	Fano U 1941 JOSA 31 213 doi: 10.1364/JOSA.31.000213
[13]	Pines D 1956 Rev. Mod. Phys. 28 184 doi: 10.1103/RevModPhys.28.184
[14]	Ritchie R H 1957 Phys. Rev. 106 874 doi: 10.1103/PhysRev.106.874
[15]	Butun S, Cinel N A and Ozbay E 2012 Nanotechnology 23 444010 doi: 10.1088/0957-4484/23/44/444010
[16]	Cho C Y, Zhang Y J, Cicek E, Rahnema B, Bai Y B, McClintock R and Razeghi M 2013 Appl. Phys. Lett. 102 211110 doi: 10.1063/1.4809521
[17]	Liu Z W, Hou W B, Pavaskar P, Aykol M and Cronin S B 2011 Nano Lett. 11 1111 doi: 10.1021/nl104005n
[18]	Clavero C 2014 Nat. Photon. 8 95 doi: 10.1038/nphoton.2013.238
[19]	Beck F J, Polman A and Catchpole K R 2009 J. Appl. Phys. 105 114310 doi: 10.1063/1.3140609
[20]	Homola J 2008 Chem. Rev. 108 462 doi: 10.1021/cr068107d
[21]	Bri, V A, Thilakarathne V, Kasi R M and Kumar C V 2012 Talanta 99 113 doi: 10.1016/j.talanta.2012.05.026
[22]	Cho C Y, Lee S J, Song J H, Hong S H, Lee S M, Cho Y H and Park S J 2011 Appl. Phys. Lett. 98 051106 doi: 10.1063/1.3552968
[23]	Pillai S, Catchpole K R, Trupke T and Green M A 2007 J. Appl. Phys. 101 093105 doi: 10.1063/1.2734885
[24]	Derkacs D, Lim S H, Matheu P, Mar W and Yu E T 2006 Appl. Phys. Lett. 89 093103 doi: 10.1063/1.2336629
[25]	Ye W, Zhang W, Wang S, Qi Z Q, Luo Z W, Chen C Q and Dai J N 2017 Opt. Commun. 395 175 doi: 10.1016/j.optcom.2016.01.089
[26]	Li Y, Liu B, Zhang R, Xie Z L, Zhuang Z, Dai J P, Tao T, Zhi T, Zhang G G, Chen P, Ren F F, Zhao H and Zheng Y D 2015 J. Appl. Phys. 117 153103 doi: 10.1063/1.4918555
[27]	Shim J P, Choi S B, Kong D J, Seo D J, Kim H J and Lee D S 2016 Opt. Express 24 A1176
[28]	Okamoto K, Niki I, Shvartser A, Narukawa Y, Mukai T and Scherer A 2004 Nat. Mater. 3 601 doi: 10.1038/nmat1198
[29]	Lai C W, An J and Ong H C 2005 Appl. Phys. Lett. 86 251105 doi: 10.1063/1.1954883
[30]	Li D B, Sun X J, Song H, Li Z M, Chen Y R, Jiang H and Miao G Q 2012 Adv. Mater. 24 845 doi: 10.1002/adma.201102585
[31]	Zhang W, Xu J, Ye W, Li Y, Qi Z Q, Dai J N, Wu Z H, Chen C Q, Yin J, Li J, Jiang H and Fang Y Y 2015 Appl. Phys. Lett. 106 021112 doi: 10.1063/1.4905929
[32]	Gao N, Huang K, Li J C, Li S P, Yang X and Junyong Kang 2012 Sci. Rep. 2 816 doi: 10.1038/srep00816
[33]	Zhang C, Tang N, Shang L L, Fu L, Wang W Y, Xu F J, Wang X Q, Ge W K and Shen B 2017 Sci. Rep. 7 2358 doi: 10.1038/s41598-017-02590-7
[34]	Willets K A and Van Duyne R P 2007 Ann. Rev. Phys. Chem. 58 267 doi: 10.1146/annurev.physchem.58.032806.104607
[35]	Gérard D and Gray S K 2015 J. Phys. D: Appl. Phys. 48 184001 doi: 10.1088/0022-3727/48/18/184001
[36]	Jiao X J and Blair S 2012 Opt. Express 20 29909 doi: 10.1364/OE.20.029909
[37]	Murray A W and Barnes W L 2007 Adv. Mater. 19 3771 doi: 10.1002/adma.200700678
[38]	Knight M W, King N S, Liu L F, Everitt H O, Nordlander P and Halas N J 2014 ACS Nano 8 834 doi: 10.1021/nn405495q
[39]	Kwon M K, Kim J Y, Kim B H, Park I K, Cho C Y, Byeon C C and Park S J 2008 Adv. Mater. 20 1253 doi: 10.1002/adma.200701130
[40]	Pryce I M, Koleske D D, Fischer A J and Atwater H A 2010 Appl. Phys. Lett. 96 153501 doi: 10.1063/1.3377900
[41]	Li D B, Sun X J, Jia Y P, Stockman M I, Paudel H P, Song H, Jiang H and Li Z M 2017 Light: Sci. Appl. 6 e17038
[42]	Liu X T, Li D B, Sun X J, Li Z M, Song H, Jiang H and Chen Y R 2015 Sci. Rep. 5 12555 doi: 10.1038/srep12555
[43]	Kumar M, Kojori H S, Kim S J, Park H H, Kim J and Yun J H 2016 J. Photon. Energy 6 042508 doi: 10.1117/1.JPE.6.042508
[44]	Wang X, Liu K W, Chen X, Li B H, Jiang M M, Zhang Z Z, Zhao H F and She D S 2017 ACS Appl. Mater. Interfaces 9 5574 doi: 10.1021/acsami.6b14430
[45]	Li G M, Song J D, Zhang J W and Hou X 2014 Solid-State Electron. 92 47 doi: 10.1016/j.sse.2013.10.016
[46]	Li G M, Zhang J W, Chen G D, Ye H G, Duan X Y and Hou X 2016 Solid-State Electron. 123 33 doi: 10.1016/j.sse.2016.05.021
[47]	Langhammer C, Schwind M, Kasemo B and Zoric I 2008 Nano Lett. 8 1461 doi: 10.1021/nl080453i
[48]	Villesen T F, Uhrenfeldt C, Johansen B and Larsen A N 2013 Nanotechnology 24 275606 doi: 10.1088/0957-4484/24/27/275606
[49]	Martin J, Proust J, Gérard D and Plain J 2013 Opt. Mater. Express 3 954 doi: 10.1364/OME.3.000954
[50]	Bao G H, Li D B, Sun X J, Jiang M M, Li Z M, Song H, Jiang H, Chen Y R, Miao G Q and Zhang Z W 2014 Opt. Express 22 24286 doi: 10.1364/OE.22.024286
[51]	Lecarme O, Sun Q, Ueno K and Misawa H 2014 ACS Photon. 1 538 doi: 10.1021/ph500096q
[52]	Lérondel G, Kostcheev S and Plain J 2012 Nanofabrication for Plasmonics Plasmonics: from Basics to Advanced Topics (Berlin, Springer-Verlag Berlin) pp. 269-316
[53]	Chan G H, Zhao J, Schatz G C and Van Duyne R P 2008 J. Phys. Chem. C 112 13958 doi: 10.1021/jp804088z
[54]	Honda M, Kumamoto Y, Taguchi A, Saito Y and Kawata S 2014 Appl. Phys. Lett. 104 061108 doi: 10.1063/1.4864395
[55]	Mak G Y, Fu W Y, Lam E Y and Choi H W 2009 Phys. Status Solidi C 6 S654
[56]	Hulteen J C and Van Duyne P 1995 J. Vac. Sci. Technol. A 13 1553 doi: 10.1116/1.579726
[57]	Taguchi A, Saito Y, Watanabe K, Yijian S and Kawata S 2012 Appl. Phys. Lett. 101 081110 doi: 10.1063/1.4747489
[58]	Shi X Q, Yang Z M, Yin S C and Zeng H B 2016 Mater. Technol.: Advanced Performance Mater. 31 544 doi: 10.1080/10667857.2016.1204511

Review of improved spectral response of ultraviolet photodetectors by surface plasmon

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