中国物理B ›› 2017, Vol. 26 ›› Issue (5): 58102-058102.doi: 10.1088/1674-1056/26/5/058102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature

He Zhang(张贺), Shangsheng Li(李尚升), Taichao Su(宿太超), Meihua Hu(胡美华), Hongan Ma(马红安), Xiaopeng Jia(贾晓鹏), Yong Li(李勇)   

  1. 1 School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;
    2 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
    3 School of Data Science, Tongren University, Tongren 554300, China
  • 收稿日期:2016-12-10 修回日期:2017-02-05 出版日期:2017-05-05 发布日期:2017-05-05
  • 通讯作者: Shangsheng Li E-mail:lishsh@hpu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 11604246), China Postdoctor Science Foundation (Grant No. 2016M592714), Professional Practice Demonstration Base for Professional Degree Graduate in Material Engineering of Henan Polytechnic University, China (Grant No. 2016YJD03), the Education Department of Henan Province, China (Grant Nos. 12A430010 and 17A430020), and the Fundamental Research Funds for the Universities of Henan Province, China (Grant No. NSFRF140110).

Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature

He Zhang(张贺)1, Shangsheng Li(李尚升)1, Taichao Su(宿太超)1, Meihua Hu(胡美华)1, Hongan Ma(马红安)2, Xiaopeng Jia(贾晓鹏)2, Yong Li(李勇)3   

  1. 1 School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;
    2 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
    3 School of Data Science, Tongren University, Tongren 554300, China
  • Received:2016-12-10 Revised:2017-02-05 Online:2017-05-05 Published:2017-05-05
  • Contact: Shangsheng Li E-mail:lishsh@hpu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 11604246), China Postdoctor Science Foundation (Grant No. 2016M592714), Professional Practice Demonstration Base for Professional Degree Graduate in Material Engineering of Henan Polytechnic University, China (Grant No. 2016YJD03), the Education Department of Henan Province, China (Grant Nos. 12A430010 and 17A430020), and the Fundamental Research Funds for the Universities of Henan Province, China (Grant No. NSFRF140110).

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摘要：

A series of diamonds with boron and sulfur co-doping were synthesized in the FeNiMnCo-C system by temperature gradient growth (TGG) under high pressure and high temperature (HPHT). Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra (XPS) of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 Ω·cm and 760.870 cm2/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×105Ω·cm and 76.300 cm2/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B-S doping were acquired.

关键词: large single crystal diamond, high pressure and high temperature, doping, electrical property

Abstract:

A series of diamonds with boron and sulfur co-doping were synthesized in the FeNiMnCo-C system by temperature gradient growth (TGG) under high pressure and high temperature (HPHT). Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra (XPS) of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 Ω·cm and 760.870 cm2/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×105Ω·cm and 76.300 cm2/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B-S doping were acquired.

Key words: large single crystal diamond, high pressure and high temperature, doping, electrical property

中图分类号:  (Diamond)

  • 81.05.ug
07.35.+k (High-pressure apparatus; shock tubes; diamond anvil cells) 61.72.U- (Doping and impurity implantation) 73.61.-r (Electrical properties of specific thin films)