Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge1-xSnx films on Si (100) and Si (111)

doi:10.1088/1674-1056/26/12/127306

中国物理B ›› 2017, Vol. 26 ›› Issue (12): 127306-127306.doi: 10.1088/1674-1056/26/12/127306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_1-xSn_x films on Si (100) and Si (111)

Yuan-Hao Miao(苗渊浩), Hui-Yong Hu(胡辉勇), Jian-Jun Song(宋建军), Rong-Xi Xuan(宣荣喜), He-Ming Zhang(张鹤鸣)

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, East Main Building, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2017-04-20 修回日期:2017-09-05 出版日期:2017-12-05 发布日期:2017-12-05
通讯作者: Yuan-Hao Miao, Yuan-Hao Miao E-mail:15336118340@163.com;huhy@xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61474085 and 61704130), the Science Research Plan in Shaanxi Province, China (Grant No. 2016GY-085), the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences (Grant No. 90109162905), and the Fundamental Research Funds for the Central Universities, China (Grant No. 61704130).

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_1-xSn_x films on Si (100) and Si (111)

Yuan-Hao Miao(苗渊浩), Hui-Yong Hu(胡辉勇), Jian-Jun Song(宋建军), Rong-Xi Xuan(宣荣喜), He-Ming Zhang(张鹤鸣)

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, East Main Building, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2017-04-20 Revised:2017-09-05 Online:2017-12-05 Published:2017-12-05
Contact: Yuan-Hao Miao, Yuan-Hao Miao E-mail:15336118340@163.com;huhy@xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61474085 and 61704130), the Science Research Plan in Shaanxi Province, China (Grant No. 2016GY-085), the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences (Grant No. 90109162905), and the Fundamental Research Funds for the Central Universities, China (Grant No. 61704130).

摘要/Abstract

摘要： Germanium-tin films with rather high Sn content (28.04% and 29.61%) are deposited directly on Si (100) and Si (111) substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on the Sn surface segregation of Ge_1-xSn_x films is investigated by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The x-ray diffraction (XRD) is also performed to determine the crystallinities of the Ge_1-xSn_x films. The experimental results indicate that root mean square (RMS) values of the annealed samples are comparatively small and have no noticeable changes for the as-grown sample when annealing temperature is below 400℃. The diameter of the Sn three-dimensional (3D) island becomes larger than that of an as-grown sample when the annealing temperature is 700℃. In addition, the Sn surface composition decreases when annealing temperature ranges from 400℃ to 700℃. However, Sn bulk compositions in samples A and B are kept almost unchanged when the annealing temperature is below 600℃. The present investigation demonstrates that the crystallinity of Ge_1-xSn_x/Si (111) has no obvious advantage over that of Ge_1-xSn_x/Si (100) and the selection of Si (111) substrate is an effective method to improve the surface morphologies of Ge_1-xSn_x films. We also find that more severe Sn surface segregation occurs in the Ge_1-xSn_x/Si (111) sample during annealing than in the Ge_1-xSn_x/Si (100) sample.

关键词: Ge_1-xSn_x films, crystallinity, Sn surface segregation, Sn surface composition

Abstract: Germanium-tin films with rather high Sn content (28.04% and 29.61%) are deposited directly on Si (100) and Si (111) substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on the Sn surface segregation of Ge_1-xSn_x films is investigated by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The x-ray diffraction (XRD) is also performed to determine the crystallinities of the Ge_1-xSn_x films. The experimental results indicate that root mean square (RMS) values of the annealed samples are comparatively small and have no noticeable changes for the as-grown sample when annealing temperature is below 400℃. The diameter of the Sn three-dimensional (3D) island becomes larger than that of an as-grown sample when the annealing temperature is 700℃. In addition, the Sn surface composition decreases when annealing temperature ranges from 400℃ to 700℃. However, Sn bulk compositions in samples A and B are kept almost unchanged when the annealing temperature is below 600℃. The present investigation demonstrates that the crystallinity of Ge_1-xSn_x/Si (111) has no obvious advantage over that of Ge_1-xSn_x/Si (100) and the selection of Si (111) substrate is an effective method to improve the surface morphologies of Ge_1-xSn_x films. We also find that more severe Sn surface segregation occurs in the Ge_1-xSn_x/Si (111) sample during annealing than in the Ge_1-xSn_x/Si (100) sample.

Key words: Ge_1-xSn_x films, crystallinity, Sn surface segregation, Sn surface composition

中图分类号: (Metal and metallic alloys)

73.61.At

苗渊浩, 胡辉勇, 宋建军, 宣荣喜, 张鹤鸣. Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_1-xSn_x films on Si (100) and Si (111)[J]. 中国物理B, 2017, 26(12): 127306-127306.

Yuan-Hao Miao(苗渊浩), Hui-Yong Hu(胡辉勇), Jian-Jun Song(宋建军), Rong-Xi Xuan(宣荣喜), He-Ming Zhang(张鹤鸣). Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_1-xSn_x films on Si (100) and Si (111)[J]. Chin. Phys. B, 2017, 26(12): 127306-127306.

参考文献 32

[1]	Wirths S and Geiger R 2015 Nat. Photon. 9 88
[2]	Dutt B and Lin H 2013 IEEE J. Sel. Topi. Quantum Electron. 19 1502706
[3]	Homewood K P and Lourenço M A 2015 Nat. Photon. 9 78
[4]	Ghetmiri S A and Du W 2014 Appl. Phys. Lett. 105 151109
[5]	Du W and Ghetmiri S A 2014 Appl. Phys. Lett. 105 051104
[6]	Gong X and Han G 2013 IEEE Electron Dev. Lett. 34 339
[7]	Liu Y and Yan J 2014 IEEE Trans. Electron Dev. 61 3639
[8]	Schulte-Braucks C and Vond D N 2016 ACS Appl. Mater. Interfaces 8 13133
[9]	Hart J and Adam T 2016 J. Appl. Phys. 119 093105
[10]	Liu M S 2014 IEEE Symposium on VLSI Technology p. 100
[11]	Han G Q 2011 Technical Digest-International Electron Devices Meeting, IEDM, 16.7.1
[12]	Wang H 2016 IEEE Trans. Electron Dev. 63 303
[13]	Liu M 2015 IEEE Trans. Electron Dev. 62 1262
[14]	Senaratne C L and Gallagher J D 2014 J. Appl. Phys. 116 133509
[15]	Zelazna K and Polak M P 2015 Appl. Phys. Lett. 106 142102
[16]	Wang W and Vajandar S 2016 J. Appl. Phys. 119 155704
[17]	MeeYi Ryu and Harris T R 2013 Appl. Phys. Lett. 102 171908
[18]	Zhang D and Jin L 2016 J. Alloys Compd. 665 131
[19]	Sadoh, Taizoh, Ooato, Akira, Park and Jong Hyeok 2015 Thin Solid Films 602 20
[20]	Tran T T, Pastor D and Gandhi H H 2016 J. Appl. Phys. 119 78
[21]	Huang Z M, Huang W Q and Liu S R 2016 Sci. Rep. 6 24802
[22]	Tsukamoto T, Hirose N and Kasamatsu A 2015 J. Mater. Sci. 50 4366
[23]	Zheng J, Wang S and Liu Z 2016 Appl. Phys. Lett. 108 4532
[24]	Tsukamoto T, Hirose N and Kasamatsu A 2015 Appl. Phys. Lett. 106 133506
[25]	Taoka N, Capellini G and Nils V D D 2016 Appl. Phys. Express 9 0312
[26]	Wang W 2014 Appl. Surf. Sci. 321 240
[27]	Wang W 2016 J. Phys. D:Appl. Phys. 49 225102
[28]	Li H 2014 Appl. Phys. Lett. 105 151906
[29]	Lin H and Chen R 2011 Appl. Phys. Lett. 98 261917
[30]	Zhang L 2016 J. Non-Cryst. Solids 448 74
[31]	Lin J Q 2013 ECS J. Solid State Sci. Tech. 2 P138
[32]	Wang W 2015 Appl. Phys. Lett. 106 232106

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_1-xSn_x films on Si (100) and Si (111)

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge_1-xSn_x films on Si (100) and Si (111)

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