中国物理B ›› 2017, Vol. 26 ›› Issue (11): 114203-114203.doi: 10.1088/1674-1056/26/11/114203

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

Feng Liang(梁锋), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ping Chen(陈平), Jing Yang(杨静), Wei Liu(刘炜), Xiang Li(李翔), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群), Mo Li(李沫), Jian Zhang(张健)   

  1. 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;
    2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    4. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China
  • 收稿日期:2017-06-10 修回日期:2017-07-25 出版日期:2017-11-05 发布日期:2017-11-05
  • 基金资助:

    Project supported by the National Key R&D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project, China (Grant No. TZ2016003), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

Feng Liang(梁锋)1,2, De-Gang Zhao(赵德刚)1,3, De-Sheng Jiang(江德生)1, Zong-Shun Liu(刘宗顺)1, Jian-Jun Zhu(朱建军)1, Ping Chen(陈平)1, Jing Yang(杨静)1, Wei Liu(刘炜)1, Xiang Li(李翔)1, Shuang-Tao Liu(刘双韬)1, Yao Xing(邢瑶)1, Li-Qun Zhang(张立群)4, Mo Li(李沫)5, Jian Zhang(张健)5   

  1. 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;
    2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    4. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China
  • Received:2017-06-10 Revised:2017-07-25 Online:2017-11-05 Published:2017-11-05
  • Contact: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
  • Supported by:

    Project supported by the National Key R&D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project, China (Grant No. TZ2016003), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).

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摘要：

Performances of blue and green laser diodes (LDs) with different u-InGaN upper waveguides (UWGs) are investigated theoretically by using LASTIP. It is found that the slope efficiency (SE) of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In0.05Ga0.95N lower waveguide (LWG) is designed to reduce the optical loss, and its slope efficiency is improved significantly.

关键词: GaN-based laser diode, slope efficiency, waveguide

Abstract:

Performances of blue and green laser diodes (LDs) with different u-InGaN upper waveguides (UWGs) are investigated theoretically by using LASTIP. It is found that the slope efficiency (SE) of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In0.05Ga0.95N lower waveguide (LWG) is designed to reduce the optical loss, and its slope efficiency is improved significantly.

Key words: GaN-based laser diode, slope efficiency, waveguide

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.Lh (Efficiency, stability, gain, and other operational parameters) 42.79.Gn (Optical waveguides and couplers)