Electronic properties of SnTe-class topological crystalline insulator materials

doi:10.1088/1674-1056/25/11/117313

中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117313-117313.doi: 10.1088/1674-1056/25/11/117313

所属专题： TOPICAL REVIEW — Topological electronic states

• TOPICAL REVIEW—Topological electronic states • 上一篇下一篇

Electronic properties of SnTe-class topological crystalline insulator materials

Jianfeng Wang(王建峰), Na Wang(王娜), Huaqing Huang(黄华卿), Wenhui Duan(段文晖)

1 Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China;
2 Institute for Advanced Study, Tsinghua University, Beijing 100084, China;
3 Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China

收稿日期:2016-04-19 修回日期:2016-07-11 出版日期:2016-11-05 发布日期:2016-11-05
通讯作者: Wenhui Duan E-mail:dwh@phys.tsinghua.edu.cn
基金资助:
Project supported by the Ministry of Science and Technology of China (Grant No. 2016YFA0301000) and the National Natural Science Foundation of China (Grant No. 11334006).

Electronic properties of SnTe-class topological crystalline insulator materials

Jianfeng Wang(王建峰)¹, Na Wang(王娜)¹, Huaqing Huang(黄华卿)¹, Wenhui Duan(段文晖)^1,2,3

1 Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China;
2 Institute for Advanced Study, Tsinghua University, Beijing 100084, China;
3 Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China

Received:2016-04-19 Revised:2016-07-11 Online:2016-11-05 Published:2016-11-05
Contact: Wenhui Duan E-mail:dwh@phys.tsinghua.edu.cn
Supported by:
Project supported by the Ministry of Science and Technology of China (Grant No. 2016YFA0301000) and the National Natural Science Foundation of China (Grant No. 11334006).

摘要/Abstract

摘要：

The rise of topological insulators in recent years has broken new ground both in the conceptual cognition of condensed matter physics and the promising revolution of the electronic devices. It also stimulates the explorations of more topological states of matter. Topological crystalline insulator is a new topological phase, which combines the electronic topology and crystal symmetry together. In this article, we review the recent progress in the studies of SnTe-class topological crystalline insulator materials. Starting from the topological identifications in the aspects of the bulk topology, surface states calculations, and experimental observations, we present the electronic properties of topological crystalline insulators under various perturbations, including native defect, chemical doping, strain, and thickness-dependent confinement effects, and then discuss their unique quantum transport properties, such as valley-selective filtering and helicity-resolved functionalities for Dirac fermions. The rich properties and high tunability make SnTe-class materials promising candidates for novel quantum devices.

关键词: topological crystalline insulator, SnTe, surface states, mirror symmetry

Abstract:

Key words: topological crystalline insulator, SnTe, surface states, mirror symmetry

中图分类号: (Surface states, band structure, electron density of states)

73.20.At

73.22.-f (Electronic structure of nanoscale materials and related systems) 71.20.-b (Electron density of states and band structure of crystalline solids) 73.63.-b (Electronic transport in nanoscale materials and structures)

王建峰, 王娜, 黄华卿, 段文晖. Electronic properties of SnTe-class topological crystalline insulator materials[J]. 中国物理B, 2016, 25(11): 117313-117313.

Jianfeng Wang(王建峰), Na Wang(王娜), Huaqing Huang(黄华卿), Wenhui Duan(段文晖). Electronic properties of SnTe-class topological crystalline insulator materials[J]. Chin. Phys. B, 2016, 25(11): 117313-117313.

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Electronic properties of SnTe-class topological crystalline insulator materials

Electronic properties of SnTe-class topological crystalline insulator materials

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