中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117304-117304.doi: 10.1088/1674-1056/25/11/117304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

Fang Liu(刘芳), Zhixin Qin(秦志新)   

  1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2016-05-09 修回日期:2016-08-15 出版日期:2016-11-05 发布日期:2016-11-05
  • 通讯作者: Zhixin Qin E-mail:zxqin@pku.edu.cn

Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

Fang Liu(刘芳), Zhixin Qin(秦志新)   

  1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • Received:2016-05-09 Revised:2016-08-15 Online:2016-11-05 Published:2016-11-05
  • Contact: Zhixin Qin E-mail:zxqin@pku.edu.cn

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摘要： Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al0.45Ga0.55N, which aimed at the solar-blind wavelength. After fluorine plasma treatment and before depositing the Ni/Au Schottky, the samples were thermal annealed in the N2 gas at 400℃. The reverse leakage current density of Al0.45Ga0.55N Schottky diode was reduced by 2 orders of magnitude at -10 V. The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing. Further capacitance-frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies. The capacitance-frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment.

关键词: plasma treatment, reverse leakage current, surface states

Abstract: Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al0.45Ga0.55N, which aimed at the solar-blind wavelength. After fluorine plasma treatment and before depositing the Ni/Au Schottky, the samples were thermal annealed in the N2 gas at 400℃. The reverse leakage current density of Al0.45Ga0.55N Schottky diode was reduced by 2 orders of magnitude at -10 V. The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing. Further capacitance-frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies. The capacitance-frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment.

Key words: plasma treatment, reverse leakage current, surface states

中图分类号:  (Surface double layers, Schottky barriers, and work functions)

  • 73.30.+y
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)