中国物理B ›› 2015, Vol. 24 ›› Issue (6): 68102-068102.doi: 10.1088/1674-1056/24/6/068102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Silicon nanowire formed via shallow anisotropic etching Si-ash-trimming for specific DNA and electrochemical detection

Tijjani Adama, U. HAshima, Th S. Dhahib   

  1. a Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Malaysia;
    b Physics Department, College of Education for Pure Science, Basra University, Basra, Iraq
  • 收稿日期:2014-07-17 修回日期:2014-11-30 出版日期:2015-06-05 发布日期:2015-06-05

Silicon nanowire formed via shallow anisotropic etching Si-ash-trimming for specific DNA and electrochemical detection

Tijjani Adama, U. HAshima, Th S. Dhahib   

  1. a Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Malaysia;
    b Physics Department, College of Education for Pure Science, Basra University, Basra, Iraq
  • Received:2014-07-17 Revised:2014-11-30 Online:2015-06-05 Published:2015-06-05
  • Contact: Tijjani Adam, U. HAshim, Th S. Dhahi E-mail:tijjaniadam@yahoo.com;uda@unimap.edu.my;Sthikra@yahoo.com
  • About author:81.07.-b; 81.07.Gf; 07.10.Cm; 62.23.St

摘要:

A functionalized silicon nanowire field-effect transistor (SiNW FET) was fabricated to detect single molecules in the pM range to detect disease at the early stage with a sensitive, robust, and inexpensive method with the ability to provide specific and reliable data. The device was designed and fabricated by indented ash trimming via shallow anisotropic etching. The approach is a simple and low-cost technique that is compatible with the current commercial semiconductor standard CMOS process without an expensive deep reactive ion etcher. Specific electric changes were observed for DNA sensing when the nanowire surface was modified with a complementary captured DNA probe and target DNA through an organic linker (–OCH2CH3) using organofunctional alkoxysilanes (3-aminopropyl) triethoxysilane (APTES). With this surface modification, a single specific target molecule can be detected. The simplicity of the sensing domain makes it feasible to miniaturize it for the development of a cancer detection kit, facilitating its use in both clinical and non-clinical environments to allow non-expert interpretation. With its novel electric response and potential for mass commercial fabrication, this biosensor can be developed to become a portable/point of care biosensor for both field and diagnostic applications.

关键词: silicon nanowire, biosensor, specific DNA detection, anisotropic etching, Si-ash-trimming, semiconductor, pH sensor

Abstract:

A functionalized silicon nanowire field-effect transistor (SiNW FET) was fabricated to detect single molecules in the pM range to detect disease at the early stage with a sensitive, robust, and inexpensive method with the ability to provide specific and reliable data. The device was designed and fabricated by indented ash trimming via shallow anisotropic etching. The approach is a simple and low-cost technique that is compatible with the current commercial semiconductor standard CMOS process without an expensive deep reactive ion etcher. Specific electric changes were observed for DNA sensing when the nanowire surface was modified with a complementary captured DNA probe and target DNA through an organic linker (–OCH2CH3) using organofunctional alkoxysilanes (3-aminopropyl) triethoxysilane (APTES). With this surface modification, a single specific target molecule can be detected. The simplicity of the sensing domain makes it feasible to miniaturize it for the development of a cancer detection kit, facilitating its use in both clinical and non-clinical environments to allow non-expert interpretation. With its novel electric response and potential for mass commercial fabrication, this biosensor can be developed to become a portable/point of care biosensor for both field and diagnostic applications.

Key words: silicon nanowire, biosensor, specific DNA detection, anisotropic etching, Si-ash-trimming, semiconductor, pH sensor

中图分类号:  (Nanoscale materials and structures: fabrication and characterization)

  • 81.07.-b
81.07.Gf (Nanowires) 07.10.Cm (Micromechanical devices and systems) 62.23.St (Complex nanostructures, including patterned or assembled structures)