中国物理B ›› 2015, Vol. 24 ›› Issue (6): 68101-068101.doi: 10.1088/1674-1056/24/6/068101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Gate-dependent photoresponse in self-assembled graphene p-n junctions

尹伟红, 王玉冰, 韩勤, 杨晓红   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
  • 收稿日期:2014-12-16 修回日期:2015-01-20 出版日期:2015-06-05 发布日期:2015-06-05
  • 基金资助:

    Project supported by the High Technology Research and Development Program of China (Grant No. 2013AA031401), the National Natural Science Foundation of China (Grant Nos. 61176053, 61274069, and 61435002), and the National Basic Research Program, China (Grant No. 2012CB933503).

Gate-dependent photoresponse in self-assembled graphene p-n junctions

Yin Wei-Hong (尹伟红), Wang Yu-Bing (王玉冰), Han Qin (韩勤), Yang Xiao-Hong (杨晓红)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
  • Received:2014-12-16 Revised:2015-01-20 Online:2015-06-05 Published:2015-06-05
  • Contact: Han Qin E-mail:hanqin@semi.ac.cn
  • About author:81.05.ue; 85.60.Dw
  • Supported by:

    Project supported by the High Technology Research and Development Program of China (Grant No. 2013AA031401), the National Natural Science Foundation of China (Grant Nos. 61176053, 61274069, and 61435002), and the National Basic Research Program, China (Grant No. 2012CB933503).

摘要:

The intrinsic photocurrent generation mechanism of a self-assembled graphene p–n junction operating at 1.55 μ is investigated experimentally. It is concluded that both a photovoltage effect and a photothermoelectric effect contribute to the final photocurrent. The photocurrent signal at the p–n junction was found to be dominated by photothermoelectric current, arising from different self-assembled doping levels.

关键词: graphene, photodetector, photovoltage, photothermoelectric

Abstract:

The intrinsic photocurrent generation mechanism of a self-assembled graphene p–n junction operating at 1.55 μ is investigated experimentally. It is concluded that both a photovoltage effect and a photothermoelectric effect contribute to the final photocurrent. The photocurrent signal at the p–n junction was found to be dominated by photothermoelectric current, arising from different self-assembled doping levels.

Key words: graphene, photodetector, photovoltage, photothermoelectric

中图分类号:  (Graphene)

  • 81.05.ue
85.60.Dw (Photodiodes; phototransistors; photoresistors)