中国物理B ›› 2015, Vol. 24 ›› Issue (2): 26103-026103.doi: 10.1088/1674-1056/24/2/026103

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The influence of ablation products on the ablation resistance of C/C-SiC composites and the growth mechanism of SiO2 nanowires

李县辉, 燕青芝, 米应映, 韩永军, 温馨, 葛昌纯   

  1. Institute of Nuclear and New Energy Systems Materials (Institute of Powder Metallurgy and Advanced Ceramics), University of Science and Technology Beijing, Beijing 100083, China
  • 收稿日期:2014-12-05 修回日期:2014-12-29 出版日期:2015-02-05 发布日期:2015-02-05
  • 基金资助:

    Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110006110025) and the National Natural Science Foundation of China (Grant No. U1134102).

The influence of ablation products on the ablation resistance of C/C-SiC composites and the growth mechanism of SiO2 nanowires

Li Xian-Hui (李县辉), Yan Qing-Zhi (燕青芝), Mi Ying-Ying (米应映), Han Yong-Jun (韩永军), Wen Xin (温馨), Ge Chang-Chun (葛昌纯)   

  1. Institute of Nuclear and New Energy Systems Materials (Institute of Powder Metallurgy and Advanced Ceramics), University of Science and Technology Beijing, Beijing 100083, China
  • Received:2014-12-05 Revised:2014-12-29 Online:2015-02-05 Published:2015-02-05
  • Contact: Yan Qing-Zhi, Ge Chang-Chun E-mail:qzyan@ustb.edu.cn;ccge@mater.ustb.edu.cn
  • Supported by:

    Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110006110025) and the National Natural Science Foundation of China (Grant No. U1134102).

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摘要：

Ablation under oxyacetylene torch with heat flux of 4186.8 (10% kW/m2 for 20 s was performed to evaluate the ablation resistance of C/C-SiC composites fabricated by chemical vapor infiltration (CVI) combined with liquid silicon infiltration (LSI) process. The results indicated that C/C-SiC composites present a better ablation resistance than C/C composites without doped SiC. The doped SiC and the ablation products SiO2 derived from it play key roles in ablation process. Bulk quantities of SiO2 nanowires with diameter of 80 nm-150 nm and length of tens microns were observed on the surface of specimens after ablation. The growth mechanism of the SiO2 nanowires was interpreted with a developed vapor-liquid-solid (VLS) driven by the temperature gradient.

关键词: C/C-SiC composites, ablation products, SiO2 nanowires, growth mechanism

Abstract:

Ablation under oxyacetylene torch with heat flux of 4186.8 (10% kW/m2 for 20 s was performed to evaluate the ablation resistance of C/C-SiC composites fabricated by chemical vapor infiltration (CVI) combined with liquid silicon infiltration (LSI) process. The results indicated that C/C-SiC composites present a better ablation resistance than C/C composites without doped SiC. The doped SiC and the ablation products SiO2 derived from it play key roles in ablation process. Bulk quantities of SiO2 nanowires with diameter of 80 nm-150 nm and length of tens microns were observed on the surface of specimens after ablation. The growth mechanism of the SiO2 nanowires was interpreted with a developed vapor-liquid-solid (VLS) driven by the temperature gradient.

Key words: C/C-SiC composites, ablation products, SiO2 nanowires, growth mechanism

中图分类号:  (Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))

  • 61.46.Km
65.90.+i (Other topics in thermal properties of condensed matter)