中国物理B ›› 2013, Vol. 22 ›› Issue (10): 108101-108101.doi: 10.1088/1674-1056/22/10/108101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Controllable synthesis, characterization, and growth mechanism of hollow ZnxCd1-xS spheres generated by a one-step thermal evaporation method

杨再兴a c, 钟伟a, 區澤棠b, 都有为a   

  1. a Nanjing National Laboratory of Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;
    b Chemistry Department, Hong Kong Baptist University, Hong Kong, China;
    c Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China
  • 收稿日期:2012-11-26 修回日期:2013-03-31 出版日期:2013-08-30 发布日期:2013-08-30
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11174132), the National Key Project for Basic Research of China (Grant Nos. 2011CB922102 and 2012CB932304), and the Science Fund from the National Laboratory of Solid State Microstructures, Nanjing University, China (Grant No. 2010ZZ18).

Controllable synthesis, characterization, and growth mechanism of hollow ZnxCd1-xS spheres generated by a one-step thermal evaporation method

Yang Zai-Xing (杨再兴)a c, Zhong Wei (钟伟)a, Au Chak-Tong (區澤棠)b, Du You-Wei (都有为)a   

  1. a Nanjing National Laboratory of Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;
    b Chemistry Department, Hong Kong Baptist University, Hong Kong, China;
    c Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China
  • Received:2012-11-26 Revised:2013-03-31 Online:2013-08-30 Published:2013-08-30
  • Contact: Yang Zai-Xing E-mail:njumethods@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11174132), the National Key Project for Basic Research of China (Grant Nos. 2011CB922102 and 2012CB932304), and the Science Fund from the National Laboratory of Solid State Microstructures, Nanjing University, China (Grant No. 2010ZZ18).

摘要: Novel hollow ZnxCd1-xS spheres that are uniform in size are synthesized through the one-step thermal evaporation of a mixture of Zn and CdS powder. From an X-ray diffraction (XRD) study, the hexagonal wurtzite phase of ZnxCd1-xS is verified, and the Zn mole fraction (x) is determined to be 0.09. According to the experimental results, we propose a mechanism for the growth of Zn0.09Cd0.91S hollow spheres. The results of the cathodoluminescence investigation indicate uniform Zn, Cd, and S distribution of alloyed Zn0.09Cd0.91S, instead of separate CdS, ZnS, or nanocrystals of a core-shell structure. To the best of our knowledge, the fabrication of ZnxCd1-xS hollow spheres of this kind by one-step thermal evaporation has never been reported. This work would present a new method of growing and applying hollow spheres on Si substrates, and the discovery of the Zn0.09Cd0.91S hollow spheres would make the investigation of ZnxCd1-xS micro/nanostructures more interesting and intriguing.

关键词: ZnxCd1-xS, hollow spheres, semiconductors, vapour deposition, growth mechanism

Abstract: Novel hollow ZnxCd1-xS spheres that are uniform in size are synthesized through the one-step thermal evaporation of a mixture of Zn and CdS powder. From an X-ray diffraction (XRD) study, the hexagonal wurtzite phase of ZnxCd1-xS is verified, and the Zn mole fraction (x) is determined to be 0.09. According to the experimental results, we propose a mechanism for the growth of Zn0.09Cd0.91S hollow spheres. The results of the cathodoluminescence investigation indicate uniform Zn, Cd, and S distribution of alloyed Zn0.09Cd0.91S, instead of separate CdS, ZnS, or nanocrystals of a core-shell structure. To the best of our knowledge, the fabrication of ZnxCd1-xS hollow spheres of this kind by one-step thermal evaporation has never been reported. This work would present a new method of growing and applying hollow spheres on Si substrates, and the discovery of the Zn0.09Cd0.91S hollow spheres would make the investigation of ZnxCd1-xS micro/nanostructures more interesting and intriguing.

Key words: ZnxCd1-xS, hollow spheres, semiconductors, vapour deposition, growth mechanism

中图分类号:  (II-VI semiconductors)

  • 81.05.Dz
81.07.-b (Nanoscale materials and structures: fabrication and characterization) 81.10.Bk (Growth from vapor)