中国物理B ›› 2015, Vol. 24 ›› Issue (10): 106801-106801.doi: 10.1088/1674-1056/24/10/106801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Mechanical strains in pecvd SiNx:H films for nanophotonic application

O. Semenovaa, A. Kozelskayab, Li Zhi-Yongc, Yu Yu-Dec   

  1. a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia;
    b Institute of Strength Physics and Materials Science, Siberian Branch of Russian Academy of Sciences, Tomsk, Russia;
    c Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2015-02-25 修回日期:2015-06-04 出版日期:2015-10-05 发布日期:2015-10-05
  • 基金资助:

    Project supported by RFBR (Grant No. 14-03-91154 NNSF) and the National Natural Science Foundation of China (Grant No. 61411130212).

Mechanical strains in pecvd SiNx:H films for nanophotonic application

O. Semenovaa, A. Kozelskayab, Li Zhi-Yongc, Yu Yu-Dec   

  1. a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia;
    b Institute of Strength Physics and Materials Science, Siberian Branch of Russian Academy of Sciences, Tomsk, Russia;
    c Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2015-02-25 Revised:2015-06-04 Online:2015-10-05 Published:2015-10-05
  • Contact: O. Semenova E-mail:oisem@isp.nsc.ru
  • Supported by:

    Project supported by RFBR (Grant No. 14-03-91154 NNSF) and the National Natural Science Foundation of China (Grant No. 61411130212).

摘要:

Hydrogenated amorphous silicon nitride films (SiNx:H) are deposited at low temperature by high-frequency plasma-enhanced chemical vapor deposition (HF PECVD). The main effort is to investigate the roles of plasma frequency and plasma power density in determining the film properties particularly in stress. Information about chemical bonds in the films is obtained by Fourier transform infrared spectroscopy (FTIR). The stresses in the SiNx:H film are determined from substrate curvature measurements. It is shown that plasma frequency plays an important role in controlling the stresses in SiNx:H films. For silicon nitride layers grown at plasma frequency 40.68 MHz initial tensile stresses are observed to be in a range of 400 MPa-700 MPa. Measurements of the intrinsic stresses of silicon nitride films show that the stress quantity is sufficient for film applications in strained silicon photonics.

关键词: silicon photonics, intrinsic stress, amorphous silicon nitride films

Abstract:

Hydrogenated amorphous silicon nitride films (SiNx:H) are deposited at low temperature by high-frequency plasma-enhanced chemical vapor deposition (HF PECVD). The main effort is to investigate the roles of plasma frequency and plasma power density in determining the film properties particularly in stress. Information about chemical bonds in the films is obtained by Fourier transform infrared spectroscopy (FTIR). The stresses in the SiNx:H film are determined from substrate curvature measurements. It is shown that plasma frequency plays an important role in controlling the stresses in SiNx:H films. For silicon nitride layers grown at plasma frequency 40.68 MHz initial tensile stresses are observed to be in a range of 400 MPa-700 MPa. Measurements of the intrinsic stresses of silicon nitride films show that the stress quantity is sufficient for film applications in strained silicon photonics.

Key words: silicon photonics, intrinsic stress, amorphous silicon nitride films

中图分类号:  (Mechanical properties; surface strains)

  • 68.35.Gy
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.70.-q (Methods of materials testing and analysis)