Mechanical strains in pecvd SiNx:H films for nanophotonic application

doi:10.1088/1674-1056/24/10/106801

中国物理B ›› 2015, Vol. 24 ›› Issue (10): 106801-106801.doi: 10.1088/1674-1056/24/10/106801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Mechanical strains in pecvd SiN_x:H films for nanophotonic application

O. Semenova^a, A. Kozelskaya^b, Li Zhi-Yong^c, Yu Yu-De^c

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia;
b Institute of Strength Physics and Materials Science, Siberian Branch of Russian Academy of Sciences, Tomsk, Russia;
c Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2015-02-25 修回日期:2015-06-04 出版日期:2015-10-05 发布日期:2015-10-05
基金资助:
Project supported by RFBR (Grant No. 14-03-91154 NNSF) and the National Natural Science Foundation of China (Grant No. 61411130212).

Mechanical strains in pecvd SiN_x:H films for nanophotonic application

O. Semenova^a, A. Kozelskaya^b, Li Zhi-Yong^c, Yu Yu-De^c

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia;
b Institute of Strength Physics and Materials Science, Siberian Branch of Russian Academy of Sciences, Tomsk, Russia;
c Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2015-02-25 Revised:2015-06-04 Online:2015-10-05 Published:2015-10-05
Contact: O. Semenova E-mail:oisem@isp.nsc.ru
Supported by:
Project supported by RFBR (Grant No. 14-03-91154 NNSF) and the National Natural Science Foundation of China (Grant No. 61411130212).

摘要/Abstract

摘要：

Hydrogenated amorphous silicon nitride films (SiN_x:H) are deposited at low temperature by high-frequency plasma-enhanced chemical vapor deposition (HF PECVD). The main effort is to investigate the roles of plasma frequency and plasma power density in determining the film properties particularly in stress. Information about chemical bonds in the films is obtained by Fourier transform infrared spectroscopy (FTIR). The stresses in the SiN_x:H film are determined from substrate curvature measurements. It is shown that plasma frequency plays an important role in controlling the stresses in SiN_x:H films. For silicon nitride layers grown at plasma frequency 40.68 MHz initial tensile stresses are observed to be in a range of 400 MPa-700 MPa. Measurements of the intrinsic stresses of silicon nitride films show that the stress quantity is sufficient for film applications in strained silicon photonics.

关键词: silicon photonics, intrinsic stress, amorphous silicon nitride films

Abstract:

Key words: silicon photonics, intrinsic stress, amorphous silicon nitride films

中图分类号: (Mechanical properties; surface strains)

68.35.Gy

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.70.-q (Methods of materials testing and analysis)

O. Semenova, A. Kozelskaya, Li Zhi-Yong, Yu Yu-De. Mechanical strains in pecvd SiN_x:H films for nanophotonic application[J]. 中国物理B, 2015, 24(10): 106801-106801.

O. Semenova, A. Kozelskaya, Li Zhi-Yong, Yu Yu-De. Mechanical strains in pecvd SiN_x:H films for nanophotonic application[J]. Chin. Phys. B, 2015, 24(10): 106801-106801.

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Mechanical strains in pecvd SiN_x:H films for nanophotonic application

Mechanical strains in pecvd SiN_x:H films for nanophotonic application

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