中国物理B ›› 2014, Vol. 23 ›› Issue (2): 28503-028503.doi: 10.1088/1674-1056/23/2/028503
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
李晓静a, 赵德刚a, 江德生a, 刘宗顺a, 陈平a, 吴亮亮a, 李亮a, 乐伶聪a, 杨静a, 何晓光a, 王辉b, 朱建军b, 张书明b, 张宝顺b, 杨辉a b
Li Xiao-Jing (李晓静)a, Zhao De-Gang (赵德刚)a, Jiang De-Sheng (江德生)a, Liu Zong-Shun (刘宗顺)a, Chen Ping (陈平)a, Wu Liang-Liang (吴亮亮)a, Li Liang (李亮)a, Le Ling-Cong (乐伶聪)a, Yang Jing (杨静)a, He Xiao-Guang (何晓光)a, Wang Hui (王辉)b, Zhu Jian-Jun (朱建军)b, Zhang Shu-Ming (张书明)b, Zhang Bao-Shun (张宝顺)b, Yang Hui (杨辉)a b
摘要: The influences of polarization and p-region doping concentration on the photocurrent response of Al0.4Ga0.6N/Al0.4Ga0.6N/Al0.65Ga0.35N p–i–n avalanche photodetector are studied in a wide range of reverse bias voltages. The simulation results indicate that the photocurrent under high inverse bias voltage decreases with the increase of polarization effect, but increases rapidly with the increase of effective doping concentration in p-type region. These phenomena are analyzed based on the calculations of the intensity and distribution of the electric field. A high p-region doping concentration in the p–i–n avalanche photodetector is shown to be important for the efficient compensation for the detrimental polarization-induced electrostatic field.
中图分类号: (Photodetectors (including infrared and CCD detectors))