Chin. Phys. B ›› 2014, Vol. 23 ›› Issue (1): 17303-017303.doi: 10.1088/1674-1056/23/1/017303
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
马晓华a b, 姜元祺a b, 王鑫华c, 吕敏a b, 张霍b, 陈伟伟a b, 刘新宇c
Ma Xiao-Hua (马晓华)a b, Jiang Yuan-Qi (姜元祺)a b, Wang Xin-Hua (王鑫华)c, Lü Min (吕敏)a b, Zhang Huo (张霍)b, Chen Wei-Wei (陈伟伟)a b, Liu Xin-Yu (刘新宇)c
摘要: This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors (HEMTs) submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.
中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)