Spin and valley half metal induced by staggered potential and magnetization in silicene

doi:10.1088/1674-1056/23/1/017203

中国物理B ›› 2014, Vol. 23 ›› Issue (1): 17203-017203.doi: 10.1088/1674-1056/23/1/017203

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Spin and valley half metal induced by staggered potential and magnetization in silicene

汪萨克, 田宏玉, 杨永宏, 汪军

Department of Physics, Southeast University, Nanjing 210096, China

收稿日期:2013-05-08 修回日期:2013-08-05 出版日期:2013-11-12 发布日期:2013-11-12
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11074032, 11074233, and 11274079) and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20131284).

Spin and valley half metal induced by staggered potential and magnetization in silicene

Wang Sa-Ke (汪萨克), Tian Hong-Yu (田宏玉), Yang Yong-Hong (杨永宏), Wang Jun (汪军)

Department of Physics, Southeast University, Nanjing 210096, China

Received:2013-05-08 Revised:2013-08-05 Online:2013-11-12 Published:2013-11-12
Contact: Wang Jun E-mail:jwang@seu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11074032, 11074233, and 11274079) and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20131284).

摘要/Abstract

摘要： We investigate the electron transport in silicene with both staggered electric potential and magnetization; the latter comes from the magnetic proximity effect by depositing silicene on a magnetic insulator. It is shown that the silicene could be a spin and valley half metal under appropriate parameters when the spin–orbit interaction is considered; further, the filtered spin and valley could be controlled by modulating the staggered potential or magnetization. It is also found that in the spin-valve structure of silicene, not only can the antiparallel magnetization configuration significantly reduce the valve-structure conductance, but the reversing staggered electric potential can cause a high-performance magnetoresistance due to the spin and valley blocking effects. Our findings show that the silicene might be an ideal basis for the spin and valley filter analyzer devices.

关键词: silicene, spin–, orbit interaction, spin and valley half metal, spin and valley blocking effect

Abstract: We investigate the electron transport in silicene with both staggered electric potential and magnetization; the latter comes from the magnetic proximity effect by depositing silicene on a magnetic insulator. It is shown that the silicene could be a spin and valley half metal under appropriate parameters when the spin–orbit interaction is considered; further, the filtered spin and valley could be controlled by modulating the staggered potential or magnetization. It is also found that in the spin-valve structure of silicene, not only can the antiparallel magnetization configuration significantly reduce the valve-structure conductance, but the reversing staggered electric potential can cause a high-performance magnetoresistance due to the spin and valley blocking effects. Our findings show that the silicene might be an ideal basis for the spin and valley filter analyzer devices.

Key words: silicene, spin–orbit interaction, spin and valley half metal, spin and valley blocking effect

中图分类号: (Spin polarized transport in semiconductors)

72.25.Dc

72.80.Vp (Electronic transport in graphene) 73.20.At (Surface states, band structure, electron density of states)

汪萨克, 田宏玉, 杨永宏, 汪军. Spin and valley half metal induced by staggered potential and magnetization in silicene[J]. 中国物理B, 2014, 23(1): 17203-017203.

Wang Sa-Ke (汪萨克), Tian Hong-Yu (田宏玉), Yang Yong-Hong (杨永宏), Wang Jun (汪军). Spin and valley half metal induced by staggered potential and magnetization in silicene[J]. Chin. Phys. B, 2014, 23(1): 17203-017203.

参考文献 27

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2005 Nature 438 197
[2]	Zhang Y, Tan Y W, Stormer H L and Kim P 2005 Nature 438 201
[3]	Novoselov K S, McCann E, Morozov S V, Falko V I, Katsnelson M I, Zeitler U, Jiang D, Schedin F and Geim A K 2006 Nat. Phys. 2 177
[4]	Beenakker C W J 2008 Rev. Mod. Phys. 80 1337
[5]	Castro Neto A H, Guinea F, Peres N M R, Novoselov K S and Geim A K 2009 Rev. Mod. Phys. 81 109
[6]	Kane C L and Mele E J 2005 Phys. Rev. Lett. 95 226801
[7]	Vogt P, De Padova P, Quaresima C, Avila J, Frantzeskakis E, Asensio M C, Resta A, Ealet B and Lay G L 2012 Phys. Rev. Lett. 108 155501
[8]	Lin C L, Arafune R, Kawahara K, Tsukahara N, Minamitani E, Kim Y, Takagi N and Kawai M 2012 Appl. Phys. Express 5 045802
[9]	Liu C C, Feng W and Yao Y 2011 Phys. Rev. Lett. 107 076802
[10]	Liu C C, Jiang H and Yao Y 2011 Phys. Rev. B 84 195430
[11]	Ezawa M 2012 New J. Phys. 14 033003
[12]	Ezawa M 2012 J. Phys. Soc. Jpn. 81 064705
[13]	Ezawa M 2012 Phys. Rev. Lett. 109 055502
[14]	Ezawa M 2013 Phys. Rev. Lett. 110 026603
[15]	Stille L, Tabert C J and Nicol E J 2012 Phys. Rev. B 86 195405
[16]	Mak K F, Lee C, Hone J, Shan J and Heinz T F 2010 Phys. Rev. Lett. 105 136805
[17]	Mak K, He K, Shan J and Heinz T 2012 Nat. Nanotechnol. 7 494
[18]	Zeng H, Dai J, Yao W, Xiao D and Cui X 2012 Nat. Nanotechnol. 7 490
[19]	Sallen G, Bouet L, Marie X, Wang G, Zhu C R, Han W P, Lu Y, Tan P H, Amand T, Liu B L and Urbaszek B 2012 Phys. Rev. B 86 081301
[20]	Lalmi B, Oughaddou H, Enriquez H, Kara A, Vizzini S, Ealet B and Aufray B 2010 Appl. Phys. Lett. 97 223109
[21]	Padova P, Quaresima C, Ottaviani C, Sheverdyaeva P, Moras P, Carbone C, Topwal D, Olivieri B, Kara A, Oughaddou H, Aufray B and Lay G 2010 Appl. Phys. Lett. 96 261905
[22]	Vogt P, De Padova P, Quaresima C, Avila J, Frantzeskakis E, Asensio M C, Resta A, Ealet B and Le Lay G 2012 Phys. Rev. Lett. 108 155501
[23]	Fleurence A, Friedlein R, Ozaki T, Kawai H, Wang Y and Yamada-Takamura Y 2012 Phys. Rev. Lett. 108 245501
[24]	Haugen H, Huertas-Hernando D and Brataas A 2008 Phys. Rev. B 77 115406
[25]	Uchida K, Xiao J, Adachi H, Ohe J, Takahashi S, Ieda J, Ota T, Kajiwara T, Umezawa H, Kawai H, Bauer G E W, Maekawa S and Saitoh E 2010 Nature Mater. 9 894
[26]	Tian H Y, Yang Y H, Chan K S and Wang J 2012 Phys. Rev. B 86 245413
[27]	Wang J and Liu S 2012 Phys. Rev. B 85 035402

Spin and valley half metal induced by staggered potential and magnetization in silicene

Spin and valley half metal induced by staggered potential and magnetization in silicene

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 27

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Jing-Fen Zhao(赵敬芬), Hui Wang(王辉), Zai-Fa Yang(杨在发), Hui Gao(高慧), Hong-Xia Bu(歩红霞), and Xiao-Juan Yuan(袁晓娟). Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations[J]. 中国物理B, 2022, 31(1): 17302-017302.
[2]	Yi-Jian Shi(施一剑), Yuan-Chun Wang(王园春), and Peng-Jun Wang(汪鹏君). Tunable valley filter efficiency by spin-orbit coupling in silicene nanoconstrictions[J]. 中国物理B, 2021, 30(5): 57201-057201.
[3]	Ying-Jie Chen(陈英杰) and Feng-Lan Shao(邵凤兰). Probability density and oscillating period of magnetopolaron in parabolic quantum dot in the presence of Rashba effect and temperature[J]. 中国物理B, 2021, 30(11): 110304-110304.
[4]	Mei-Rong Liu(刘美荣), Zheng-Fang Liu(刘正方), Ruo-Long Zhang(张若龙), Xian-Bo Xiao(肖贤波), and Qing-Ping Wu(伍清萍). Goos-Hänchen-like shift related to spin and valley polarization in ferromagnetic silicene[J]. 中国物理B, 2021, 30(10): 107302-107302.
[5]	黄伟其, 刘世荣, 彭鸿雁, 李鑫, 黄忠梅. Synthesis of new silicene structure and its energy band properties[J]. 中国物理B, 2020, 29(8): 84202-084202.
[6]	赵阳, 阳成熙, 朱家玺, 林峰, 方哲宇, 朱星. Optical spin-to-orbital angular momentum conversion instructured optical fields[J]. 中国物理B, 2020, 29(6): 67301-067301.
[7]	John Tombe Jada Marcellino, 王美娟, 汪萨克. Generation of valley pump currents in silicene[J]. 中国物理B, 2019, 28(1): 17204-017204.
[8]	吴泽宾, 张余洋, 李更, 杜世萱, 高鸿钧. Electronic properties of silicene in BN/silicene van der Waals heterostructures[J]. 中国物理B, 2018, 27(7): 77302-077302.
[9]	张林. Electrical controllable spin valves in a zigzag silicene nanoribbon ferromagnetic junction[J]. 中国物理B, 2018, 27(6): 67203-067203.
[10]	John Tombe Jada Marcellino, 王美娟, 汪萨克, 汪军. Spin-current pump in silicene[J]. 中国物理B, 2018, 27(5): 57801-057801.
[11]	邹剑飞, 康静. Distinct edge states and optical conductivities in the zigzag and armchair silicene nanoribbons under exchange and electric fields[J]. 中国物理B, 2018, 27(3): 37301-037301.
[12]	刘端阳, 夏建白. Spin flip in single quantum ring with Rashba spin-orbit interation[J]. 中国物理B, 2018, 27(3): 37201-037201.
[13]	徐润峰, 韩奎, 李海鹏. Effect of isotope doping on phonon thermal conductivity of silicene nanoribbons: A molecular dynamics study[J]. 中国物理B, 2018, 27(2): 26801-026801.
[14]	Wirth-Lima A J,Silva M G,Sombra A S B. Comparisons of electrical and optical properties between graphene and silicene-A review[J]. 中国物理B, 2018, 27(2): 23201-023201.
[15]	戚凤华, 曹军, 曹杰, 张力发. The nonlocal transport and switch effect in light- and electric-controlled silicene-superconductor hybrid structure[J]. 中国物理B, 2018, 27(12): 127401-127401.