中国物理B ›› 2013, Vol. 22 ›› Issue (7): 76102-076102.doi: 10.1088/1674-1056/22/7/076102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Growth and characterization of straight InAs/GaAs nanowireheterostructures on Si substrate

颜鑫, 张霞, 李军帅, 吕晓龙, 任晓敏, 黄永清   

  1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • 收稿日期:2012-12-06 修回日期:2013-03-06 出版日期:2013-06-01 发布日期:2013-06-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2010CB327600), the National Natural Science Foundation of China (Grant Nos. 61020106007, 61077049, and 61211120195), the International Science and Technology Cooperation Program of China (Grant No. 2011DFR11010), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20120005110011), the Programme of Introducing Talents of Discipline to Universities (111 Program) of China (Grant No. B07005), and the Excellent Ph. D. Students Foundation of Beijing University of Posts and Telecommunications, China (Grant No. CX201213).

Growth and characterization of straight InAs/GaAs nanowireheterostructures on Si substrate

Yan Xin (颜鑫), Zhang Xia (张霞), Li Jun-Shuai (李军帅), Lü Xiao-Long (吕晓龙), Ren Xiao-Min (任晓敏), Huang Yong-Qing (黄永清)   

  1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • Received:2012-12-06 Revised:2013-03-06 Online:2013-06-01 Published:2013-06-01
  • Contact: Zhang Xia E-mail:xzhang@bupt.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2010CB327600), the National Natural Science Foundation of China (Grant Nos. 61020106007, 61077049, and 61211120195), the International Science and Technology Cooperation Program of China (Grant No. 2011DFR11010), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20120005110011), the Programme of Introducing Talents of Discipline to Universities (111 Program) of China (Grant No. B07005), and the Excellent Ph. D. Students Foundation of Beijing University of Posts and Telecommunications, China (Grant No. CX201213).

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摘要： Vertical InAs/GaAs nanowire (NW) heterostructures with a straight InAs segment have been successfully fabricated on Si (111) substrate by using AlGaAs/GaAs buffer layers coupled with a composition grading InGaAs segment. Both the GaAs and InAs segments are not limited by the misfit strain induced critical diameter. The low growth rate of InAs NWs is attributed to the AlGaAs/GaAs buffer layers which dramatically decrease the adatom diffusion contribution to the InAs NW growth. The crystal structure of InAs NW can be tuned from zincblende to wurtzite by controlling its diameter as well as the length of GaAs NWs. This work helps to open up a road for the integration of high-quality III-V NW heterostructures with Si.

关键词: nanowire, Si, buffer layer, adatom diffusion

Abstract: Vertical InAs/GaAs nanowire (NW) heterostructures with a straight InAs segment have been successfully fabricated on Si (111) substrate by using AlGaAs/GaAs buffer layers coupled with a composition grading InGaAs segment. Both the GaAs and InAs segments are not limited by the misfit strain induced critical diameter. The low growth rate of InAs NWs is attributed to the AlGaAs/GaAs buffer layers which dramatically decrease the adatom diffusion contribution to the InAs NW growth. The crystal structure of InAs NW can be tuned from zincblende to wurtzite by controlling its diameter as well as the length of GaAs NWs. This work helps to open up a road for the integration of high-quality III-V NW heterostructures with Si.

Key words: nanowire, Si, buffer layer, adatom diffusion

中图分类号:  (Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))

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