Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (12): 124203-124203.doi: 10.1088/1674-1056/22/12/124203

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Control of gain and thermal carrier loss profiles for mode optimization in 980-nm broad-area vertical-cavity surface-emitting lasers

吴坚, 崔怀洋, 黄梦, 马明磊   

  1. Department of Applied Physics, Beihang University, Beijing 100191, China
  • 收稿日期:2013-01-29 修回日期:2013-03-13 出版日期:2013-10-25 发布日期:2013-10-25
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 10974012).

Control of gain and thermal carrier loss profiles for mode optimization in 980-nm broad-area vertical-cavity surface-emitting lasers

Wu Jian (吴坚), Cui Huai-Yang (崔怀洋), Huang Meng (黄梦), Ma Ming-Lei (马明磊)   

  1. Department of Applied Physics, Beihang University, Beijing 100191, China
  • Received:2013-01-29 Revised:2013-03-13 Online:2013-10-25 Published:2013-10-25
  • Contact: Wu Jian E-mail:jwu2@buaa.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 10974012).

摘要: Optical gain and thermal carrier loss distributions regarding current diffusion and various electric contact areas are investigated to improve the near-field modes from the ring-shape to a Gaussian-like configuration for extra-broad-area and oxide-confined vertical-cavity surface-emitting lasers. In this work an equivalent circuit network model is used. The resistance of the continuously-graded distributed Bragg reflectors (DBRs), the current diffusion and the temperature effect due to different electric-contact areas are calculated and analyzed at first, as these parameters affect one another and are the key factors in determining the gain and thermal carrier loss. Finally, the gain and thermal carrier loss distributions are calculated and discussed.

关键词: optical gain, carrier loss, thermal effect, vertical-cavity-surface-emitting laser

Abstract: Optical gain and thermal carrier loss distributions regarding current diffusion and various electric contact areas are investigated to improve the near-field modes from the ring-shape to a Gaussian-like configuration for extra-broad-area and oxide-confined vertical-cavity surface-emitting lasers. In this work an equivalent circuit network model is used. The resistance of the continuously-graded distributed Bragg reflectors (DBRs), the current diffusion and the temperature effect due to different electric-contact areas are calculated and analyzed at first, as these parameters affect one another and are the key factors in determining the gain and thermal carrier loss. Finally, the gain and thermal carrier loss distributions are calculated and discussed.

Key words: optical gain, carrier loss, thermal effect, vertical-cavity-surface-emitting laser

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.40.Cg (Contact resistance, contact potential)