Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge

doi:10.1088/1674-1056/22/1/017301

Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 17301-017301.doi: 10.1088/1674-1056/22/1/017301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge

胡波, 黄仕华, 吴锋民

Physics Department, Zhejiang Normal University, Jinhua 321004, China

收稿日期:2012-06-09 修回日期:2012-07-09 出版日期:2012-12-01 发布日期:2012-12-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61076055), the Program for Innovative Research Team of Zhejiang Normal University of China (Grant No. 2007XCXTD-5), and the Open Program of Surface Physics Laboratory of Fudan University, China (Grant No. FDS KL2011_04).

Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge

Hu Bo (胡波), Huang Shi-Hua (黄仕华), Wu Feng-Min (吴锋民)

Physics Department, Zhejiang Normal University, Jinhua 321004, China

Received:2012-06-09 Revised:2012-07-09 Online:2012-12-01 Published:2012-12-01
Contact: Huang Shi-Hua E-mail:huangshihua@zjnu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61076055), the Program for Innovative Research Team of Zhejiang Normal University of China (Grant No. 2007XCXTD-5), and the Open Program of Surface Physics Laboratory of Fudan University, China (Grant No. FDS KL2011_04).

摘要/Abstract

摘要： A model based on analysis of self-consistent Poisson-Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor (MOS) structure. In this model, the influences of interface trap charge (ITC) at the Si-SiO₂ interface and fixed oxide charge (FOC) in the oxide region are taken into account, and one-band effective mass approximation is used. The tunneling probability is obtained by employing the transfer matrix method. Further, the effects of in-plane momentum on the quantization in the electron motion perpendicular to the Si-SiO₂ interface of a MOS device are investigated. Theoretical simulation results indicate that both ITC and FOC have great influence on the tunneling current through a MOS structure when their densities are larger than 10¹² cm^-2, which results from the great change of bound electrons near the Si-SiO₂ interface and the oxide region. Therefore, for real ultrathin MOS structures with ITC and FOC, this model can give a more accurate description for tunneling current in the inversion layer.

关键词: tunneling current, ultrathin oxide, interface trap charge, fixed oxide charge

Abstract: A model based on analysis of self-consistent Poisson-Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor (MOS) structure. In this model, the influences of interface trap charge (ITC) at the Si-SiO₂ interface and fixed oxide charge (FOC) in the oxide region are taken into account, and one-band effective mass approximation is used. The tunneling probability is obtained by employing the transfer matrix method. Further, the effects of in-plane momentum on the quantization in the electron motion perpendicular to the Si-SiO₂ interface of a MOS device are investigated. Theoretical simulation results indicate that both ITC and FOC have great influence on the tunneling current through a MOS structure when their densities are larger than 10¹² cm^-2, which results from the great change of bound electrons near the Si-SiO₂ interface and the oxide region. Therefore, for real ultrathin MOS structures with ITC and FOC, this model can give a more accurate description for tunneling current in the inversion layer.

Key words: tunneling current, ultrathin oxide, interface trap charge, fixed oxide charge

中图分类号: (Metal-to-metal contacts)

73.40.Jn

73.50.-h (Electronic transport phenomena in thin films) 61.72.-y (Defects and impurities in crystals; microstructure)

胡波, 黄仕华, 吴锋民. Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge[J]. Chin. Phys. B, 2013, 22(1): 17301-017301.

Hu Bo (胡波), Huang Shi-Hua (黄仕华), Wu Feng-Min (吴锋民). Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge[J]. Chin. Phys. B, 2013, 22(1): 17301-017301.

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Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge

Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge

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