Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H–SiC substrates

doi:10.1088/1674-1056/21/3/038102

中国物理B ›› 2012, Vol. 21 ›› Issue (3): 38102-038102.doi: 10.1088/1674-1056/21/3/038102

王党朝¹ ²,张玉明¹,张义门¹,雷天民¹,郭辉¹,王悦湖¹,汤晓燕¹,王航¹

收稿日期:2011-07-15 修回日期:2011-08-30 出版日期:2012-02-15 发布日期:2012-02-15
通讯作者: 王党朝,wangdangchao@yahoo.com.cn E-mail:wangdangchao@yahoo.com.cn

Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H–SiC substrates

Wang Dang-Chao(王党朝)^a)b)†, Zhang Yu-Ming(张玉明)^a), Zhang Yi-Men(张义门)^a), Lei Tian-Min(雷天民)^a), Guo Hui(郭辉)^a), Wang Yue-Hu(王悦湖)^a), Tang Xiao-Yan(汤晓燕)^a), and Wang Hang(王航)^a)

a. School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;
b. School of Physics and Electronic Engineering, Xianyang Normal College, Xianyang 712000, China

Received:2011-07-15 Revised:2011-08-30 Online:2012-02-15 Published:2012-02-15
Contact: Wang Dang-Chao,wangdangchao@yahoo.com.cn E-mail:wangdangchao@yahoo.com.cn
Supported by:
Project supported by the Key Research Foundation from the Ministry of Education of China (Grant No. JY10000925016).

摘要/Abstract

Abstract: In this paper, the epitaxial graphene layers grown on Si- and C-face 6H-SiC substrates are investigated under a low pressure of 400 Pa at 1600 ℃. By using atomic force microscopy and Raman spectroscopy, we find that there are distinct differences in the formation and the properties between the epitaxial graphene layers grown on the Si-face and the C-face substrates, including the hydrogen etching process, the stacking type, and the number of layers. Hopefully, our results will be useful for improving the quality of the epitaxial graphene on SiC substrate.

Key words: SiC substrate, epitaxial graphene, Raman spectroscopy

中图分类号: (Graphene)

81.05.ue

78.30.-j (Infrared and Raman spectra) 61.48.Gh (Structure of graphene)

王党朝, 张玉明, 张义门, 雷天民, 郭辉, 王悦湖, 汤晓燕, 王航. [J]. 中国物理B, 2012, 21(3): 38102-038102.

Wang Dang-Chao(王党朝), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Lei Tian-Min(雷天民), Guo Hui(郭辉), Wang Yue-Hu(王悦湖), Tang Xiao-Yan(汤晓燕), and Wang Hang(王航) . Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H–SiC substrates[J]. Chin. Phys. B, 2012, 21(3): 38102-038102.

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Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H–SiC substrates

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