中国物理B ›› 2011, Vol. 20 ›› Issue (6): 66104-066104.doi: 10.1088/1674-1056/20/6/066104

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Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

刘尧平1, 梅增霞1, 李俊强1, 杜小龙1, 英敏菊2, A. Yu. Kuznetsov3   

  1. (1)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; (2)College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China; (3)Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo, Norway
  • 收稿日期:2010-12-03 修回日期:2011-01-18 出版日期:2011-06-15 发布日期:2011-06-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076007 and 50532090), the National Basic Research Program of China (Grant Nos. 2007CB936203, 2009CB929400, 2009AA033101, and 2011CB302002), the Knowledge Innovation Project of the Chinese Academy of Sciences, and the Research Council of Norway through the FRINAT "Understanding ZnO" Project.

Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

Liu Yao-Ping (刘尧平)a, Ying Min-Ju (英敏菊)b, Mei Zeng-Xia (梅增霞)a, Li Jun-Qiang (李俊强)a, Du Xiao-Long (杜小龙)a, A. Yu. Kuznetsovc   

  1. a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; b College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China; c Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo, Norway
  • Received:2010-12-03 Revised:2011-01-18 Online:2011-06-15 Published:2011-06-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076007 and 50532090), the National Basic Research Program of China (Grant Nos. 2007CB936203, 2009CB929400, 2009AA033101, and 2011CB302002), the Knowledge Innovation Project of the Chinese Academy of Sciences, and the Research Council of Norway through the FRINAT "Understanding ZnO" Project.

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摘要： In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 (L) peak in annealed high Sb+ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of SbZn-2VZn complex acceptor. The appearance of a new peak at 510 cm-1 in the annealed high dose Sb+ implanted samples is speculated to result from (Zn interstitials-O interstitials) Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb + implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.

关键词: ZnO, ion implantation, Raman spectra, molecular beam epitaxy

Abstract: In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 (L) peak in annealed high Sb+ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of SbZn-2VZn complex acceptor. The appearance of a new peak at 510 cm-1 in the annealed high dose Sb+ implanted samples is speculated to result from (Zn interstitials-O interstitials) Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb + implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.

Key words: ZnO, ion implantation, Raman spectra, molecular beam epitaxy

中图分类号:  (Doping and impurity implantation)

  • 61.72.U-
61.72.uj (III-V and II-VI semiconductors) 78.30.-j (Infrared and Raman spectra) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)