Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers

doi:10.1088/1674-1056/19/9/097201

中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97201-097201.doi: 10.1088/1674-1056/19/9/097201

Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers

李斌成¹, 刘显明², 黄秋萍²

(1)Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China; (2)Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China; Graduate School of the Chinese Academy of Sciences, Beijing 100039, China

收稿日期:2010-01-22 修回日期:2010-02-23 出版日期:2010-09-15 发布日期:2010-09-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60676058).

Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers

Liu Xian-Ming(刘显明)^a)b), Li Bin-Cheng(李斌成)^a)^†, and Huang Qiu-Ping(黄秋萍)^a)b)

^a Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China; ^b Graduate School of the Chinese Academy of Sciences, Beijing 100039, China

Received:2010-01-22 Revised:2010-02-23 Online:2010-09-15 Published:2010-09-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60676058).

摘要/Abstract

摘要： An experimental study on the photocarrier radiometry signals of As⁺ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion implantation dose (1×10¹¹--1×10¹⁶/cm²), implantation energy (20--140 keV) and subsequent isochronical annealing temperature (500--1100 du are investigated. The results show that photocarrier radiometry signals are greatly enhanced for implanted samples annealed at high temperature, especially for those with a high implantation dose. The reduced surface recombination rate resulting from a high built-in electric field generated by annealing-activated impurities in the pn junction is believed to be responsible for the photocarrier radiometry signal enhancement. Photocarrier radiometry is contactless and can therefore be used as an effective in-line tool for the thermal annealing process monitoring of the ion-implanted wafers in semiconductor industries.

Abstract: An experimental study on the photocarrier radiometry signals of As⁺ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion implantation dose (1×10¹¹–1×10¹⁶/cm²), implantation energy (20–140 keV) and subsequent isochronical annealing temperature (500–1100 $^\circ$C are investigated. The results show that photocarrier radiometry signals are greatly enhanced for implanted samples annealed at high temperature, especially for those with a high implantation dose. The reduced surface recombination rate resulting from a high built-in electric field generated by annealing-activated impurities in the pn junction is believed to be responsible for the photocarrier radiometry signal enhancement. Photocarrier radiometry is contactless and can therefore be used as an effective in-line tool for the thermal annealing process monitoring of the ion-implanted wafers in semiconductor industries.

Key words: photocarrier radiometry, ion implantation, thermal annealing, silicon

中图分类号:

7220J

刘显明, 李斌成, 黄秋萍. Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers[J]. 中国物理B, 2010, 19(9): 97201-097201.

Liu Xian-Ming(刘显明), Li Bin-Cheng(李斌成), and Huang Qiu-Ping(黄秋萍). Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers[J]. Chin. Phys. B, 2010, 19(9): 97201-097201.

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Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers

Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers

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