中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97202-097202.doi: 10.1088/1674-1056/19/9/097202
庄奕琪1, 何亮2, 杜磊2, 陈华2, 陈文豪2, 李伟华2, 孙鹏2
He Liang(何亮)a)†, Du Lei(杜磊)a), Zhuang Yi-Qi(庄奕琪)b), Chen Hua(陈华)a), Chen Wen-Hao(陈文豪)a), Li Wei-Hua(李伟华)a), and Sun Peng(孙鹏)a)
摘要: Grain boundary plays a key role in electromigration process of polycrystal interconnection. We take a free volume to represent a 'vacancy--ion complex' as a function of grain boundary specific resistivity, and develop a new characterisation model for grain boundary noise. This model reveals the internal relation between the boundary scattering section and electromigration noise. Comparing the simulation result with our experimental result, we find the source as well as the form of noise change in the electromigration process. In order to describe the noise enhancement at grain boundary quantitatively, we propose a new parameter—grain boundary noise enhancement factor, which reflects that the grain boundary noise can characterise the electromigration damage sensitively.
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