The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

doi:10.1088/1674-1056/19/9/097306

中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97306-097306.doi: 10.1088/1674-1056/19/9/097306

The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

郝跃¹, 曹艳荣², 田文超², 马晓华³

(1)Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China; (2)School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China; (3)School of Technical Physics, Xidian University, Xi'an 710071, China

收稿日期:2009-09-18 修回日期:2009-03-19 出版日期:2010-09-15 发布日期:2010-09-15
基金资助:
Project supported by the Fundamental Research Funds in Xidian Universities (Grant No. JY10000904009) and the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2007BAK25B03)

The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

Cao Yan-Rong(曹艳荣)^a)^†, Ma Xiao-Hua(马晓华)^b), Hao Yue(郝跃)^c), and Tian Wen-Chao(田文超)^a)

^a School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China; ^b School of Technical Physics, Xidian University, Xi'an 710071, China; ^c Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China

Received:2009-09-18 Revised:2009-03-19 Online:2010-09-15 Published:2010-09-15
Supported by:
Project supported by the Fundamental Research Funds in Xidian Universities (Grant No. JY10000904009) and the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2007BAK25B03)

摘要/Abstract

摘要： Negative Bias Temperature Instability (NBTI) has become one of the most serious reliability problems of metal--oxide--semiconductor field-effect transistors (MOSFETs). The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25--0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction--diffusion model with H⁺related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H⁺generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H⁺generated during NBTI stress.

Abstract: Negative Bias Temperature Instability (NBTI) has become one of the most serious reliability problems of metal–oxide–semiconductor field-effect transistors (MOSFETs). The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25–0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction–diffusion model with H⁺related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H⁺generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H⁺generated during NBTI stress.

Key words: NBTI, 90nm, p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs), model

中图分类号:

7340Q

曹艳荣, 马晓华, 郝跃, 田文超. The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors[J]. 中国物理B, 2010, 19(9): 97306-097306.

Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), and Tian Wen-Chao(田文超). The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors[J]. Chin. Phys. B, 2010, 19(9): 97306-097306.

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The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

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