中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97107-097107.doi: 10.1088/1674-1056/19/9/097107

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Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

陈丰平, 张玉明, 吕红亮, 张义门, 黄建华   

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2010-01-11 修回日期:2010-03-15 出版日期:2010-09-15 发布日期:2010-09-15
  • 基金资助:
    Project supported by the 13115 Innovation Engineering of Shanxi (Grant No. 2008ZDKG-30).

Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

Chen Feng-Ping(陈丰平)† , Zhang Yu-Ming(张玉明), Lü Hong-Liang(吕红亮), Zhang Yi-Men(张义门), and Huang Jian-Hua(黄建华)   

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2010-01-11 Revised:2010-03-15 Online:2010-09-15 Published:2010-09-15
  • Supported by:
    Project supported by the 13115 Innovation Engineering of Shanxi (Grant No. 2008ZDKG-30).

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摘要： This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination.

Abstract: This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination.

Key words: 4H-SiC, junction barrier Schottky diode, annealing, electrical characteristics

中图分类号: 

  • 7155D