中国物理B ›› 2010, Vol. 19 ›› Issue (10): 106802-106802.doi: 10.1088/1674-1056/19/10/106802

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Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

郭希, 王辉, 江德生, 王玉田, 赵德刚, 朱建军, 刘宗顺, 张书明, 杨辉   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2010-02-23 修回日期:2010-05-17 出版日期:2010-10-15 发布日期:2010-10-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001, 60776047, 60976045, and 60836003), the National Basic Research Programme of China (Grant No. 2007CB936700) and the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60925017).

Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

Guo Xi(郭希)†, Wang Hui(王辉), Jiang De-Sheng(江德生), Wang Yu-Tian(王玉田), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Zhang Shu-Ming(张书明), and Yang Hui(杨辉)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2010-02-23 Revised:2010-05-17 Online:2010-10-15 Published:2010-10-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001, 60776047, 60976045, and 60836003), the National Basic Research Programme of China (Grant No. 2007CB936700) and the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60925017).

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摘要： The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more In atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.

Abstract: The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more In atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.

Key words: InGaN, In-plane grazing incidence x-ray diffraction, reciprocal space mapping, biaxial strain

中图分类号:  (X-ray diffraction)

  • 61.05.cp
62.20.D- (Elasticity) 68.55.-a (Thin film structure and morphology) 68.60.Bs (Mechanical and acoustical properties) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.15.Kk (Vapor phase epitaxy; growth from vapor phase)