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Wenyu Xiang(相文雨), Yaping Wang(王亚萍), Weixiao Ji(纪维霄), Wenjie Hou(侯文杰),Shengshi Li(李胜世), and Peiji Wang(王培吉). Prediction of one-dimensional CrN nanostructure as a promising ferromagnetic half-metal[J]. 中国物理B, 2023, 32(3): 37103-037103. |
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Ming Yan(闫明), Zhi-Yuan Xie(谢志远), and Miao Gao(高淼). High-temperature ferromagnetism and strong π-conjugation feature in two-dimensional manganese tetranitride[J]. 中国物理B, 2023, 32(3): 37104-037104. |
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Li-Man Xiao(肖丽蔓), Huan-Cheng Yang(杨焕成), and Zhong-Yi Lu(卢仲毅). Li2NiSe2: A new-type intrinsic two-dimensional ferromagnetic semiconductor above 200 K[J]. 中国物理B, 2023, 32(3): 37501-037501. |
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Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504. |
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Jia Chen(陈佳), Peiyue Yu(于沛玥), Lei Zhao(赵磊), Yanru Li(李彦如), Meiyin Yang(杨美音), Jing Xu(许静), Jianfeng Gao(高建峰), Weibing Liu(刘卫兵), Junfeng Li(李俊峰), Wenwu Wang(王文武), Jin Kang(康劲), Weihai Bu(卜伟海), Kai Zheng(郑凯), Bingjun Yang(杨秉君), Lei Yue(岳磊), Chao Zuo(左超), Yan Cui(崔岩), and Jun Luo(罗军). Charge-mediated voltage modulation of magnetism in Hf0.5Zr0.5O2/Co multiferroic heterojunction[J]. 中国物理B, 2023, 32(2): 27504-027504. |
[6] |
Yuankang Chen(陈远康), Yuanliang Zhou(周远良), Jie Jiang(蒋杰), Tingke Rao(饶庭柯), Wugang Liao(廖武刚), and Junjie Liu(刘俊杰). Enhancement of holding voltage by a modified low-voltage trigger silicon-controlled rectifier structure for electrostatic discharge protection[J]. 中国物理B, 2023, 32(2): 28502-028502. |
[7] |
Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Sub-stochiometric MoOx by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells[J]. 中国物理B, 2022, 31(9): 98401-098401. |
[8] |
Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇). Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure[J]. 中国物理B, 2022, 31(9): 98502-098502. |
[9] |
Zhong-Xue Huang(黄忠学), Rui Wang(王瑞), Xin Yang(杨鑫), Hao-Feng Chen(陈浩锋), and Li-Xin Cao(曹立新). Magnetic properties of oxides and silicon single crystals[J]. 中国物理B, 2022, 31(8): 87501-087501. |
[10] |
Zhongchong Lin(林中冲), Yuxuan Peng(彭宇轩), Baochun Wu(吴葆春), Changsheng Wang(王常生), Zhaochu Luo(罗昭初), and Jinbo Yang(杨金波). Magnetic van der Waals materials: Synthesis, structure, magnetism, and their potential applications[J]. 中国物理B, 2022, 31(8): 87506-087506. |
[11] |
Jun Ren(任军), Junming Li(李军明), Sheng Zhang(张胜), Jun Li(李骏), Wenxia Su(苏文霞), Dunhui Wang(王敦辉), Qingqi Cao(曹庆琪), and Youwei Du(都有为). Voltage control magnetism and ferromagnetic resonance in an Fe19Ni81/PMN-PT heterostructure by strain[J]. 中国物理B, 2022, 31(7): 77502-077502. |
[12] |
Chuchu Zhu(朱楚楚), Hao Su(苏豪), Erjian Cheng(程二建), Lin Guo(郭琳), Binglin Pan(泮炳霖), Yeyu Huang(黄烨煜), Jiamin Ni(倪佳敏), Yanfeng Guo(郭艳峰), Xiaofan Yang(杨小帆), and Shiyan Li(李世燕). High-pressure study of topological semimetals XCd2Sb2 (X = Eu and Yb)[J]. 中国物理B, 2022, 31(7): 76201-076201. |
[13] |
Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501. |
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Ning Xi(西宁) and Rong Yu(俞榕). Dynamical signatures of the one-dimensional deconfined quantum critical point[J]. 中国物理B, 2022, 31(5): 57501-057501. |
[15] |
Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东). Assessing the effect of hydrogen on the electronic properties of 4H-SiC[J]. 中国物理B, 2022, 31(5): 56108-056108. |