中国物理B ›› 2008, Vol. 17 ›› Issue (9): 3438-3443.doi: 10.1088/1674-1056/17/9/049

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Spin-dependent tunnelling through an indirect double-barrier structure

张存喜1, 王建明1, 梁九卿1, 王瑞2   

  1. (1)Department of Physics and Institute of Theoretical Physics, Shanxi University, Taiyuan 030006, China; (2)Physical Department, Zhejiang Ocean University, Zhoushan 316000, China
  • 收稿日期:2008-03-05 修回日期:2008-04-14 出版日期:2008-09-08 发布日期:2008-09-08
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10475053).

Spin-dependent tunnelling through an indirect double-barrier structure

Wang Rui(王瑞)a)†, Zhang Cun-Xi(张存喜)b), Wang Jian-Ming(王建明)b), and Liang Jiu-Qing(梁九卿)b)   

  1. a Physical Department, Zhejiang Ocean University, Zhoushan 316000, China; b Department of Physics and Institute of Theoretical Physics, Shanxi University, Taiyuan 030006, China
  • Received:2008-03-05 Revised:2008-04-14 Online:2008-09-08 Published:2008-09-08
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10475053).

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摘要： We use the transfer matrix method to study the quantum tunnelling through an indirect-band-gap double-barrier like the GaAs/AlAs/GaAs/AlAs/GaAs heterostructures along the [001] axis, which is described by the tight-binding model. The $X$-valley quasi-bound state gives rise to the Fano resonance different from the direct double-barrier transition in a resonance-tunnelling diode. The quantitative calculations demonstrate that a relatively high spin-polarization of the transmission probability can be achieved as compared with the single-barrier tunnelling case. Moreover the extension to the multi-barrier device is provided and leads to an important observation that the spin polarization increases with the number of barriers.

关键词: spin-polarized, spin--orbit interaction, indirect-barrier

Abstract: We use the transfer matrix method to study the quantum tunnelling through an indirect-band-gap double-barrier like the GaAs/AlAs/GaAs/AlAs/GaAs heterostructures along the [001] axis, which is described by the tight-binding model. The $X$-valley quasi-bound state gives rise to the Fano resonance different from the direct double-barrier transition in a resonance-tunnelling diode. The quantitative calculations demonstrate that a relatively high spin-polarization of the transmission probability can be achieved as compared with the single-barrier tunnelling case. Moreover the extension to the multi-barrier device is provided and leads to an important observation that the spin polarization increases with the number of barriers.

Key words: spin-polarized, spin--orbit interaction, indirect-barrier

中图分类号:  (Tunneling)

  • 73.40.Gk
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)