›› 2015, Vol. 24 ›› Issue (4): 47305-047305.doi: 10.1088/1674-1056/24/4/047305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Perfect GMR effect in gapped graphene-based ferromagnetic—normal—ferromagnetic junctions

Hossein Karbaschi, Gholam Reza Rashedi   

  1. Department of Physics, University of Isfahan, Hezar Jerib Ave., Isfahan 81746-73441, Iran
  • 收稿日期:2014-09-17 修回日期:2014-11-13 出版日期:2015-04-05 发布日期:2015-04-05

Perfect GMR effect in gapped graphene-based ferromagnetic—normal—ferromagnetic junctions

Hossein Karbaschi, Gholam Reza Rashedi   

  1. Department of Physics, University of Isfahan, Hezar Jerib Ave., Isfahan 81746-73441, Iran
  • Received:2014-09-17 Revised:2014-11-13 Online:2015-04-05 Published:2015-04-05
  • Contact: Hossein Karbaschi E-mail:h.karbaschi@sci.ui.ac.ir

摘要: We investigate the quantum transport property in gapped graphene-based ferromagnetic/normal/ferromagnetic (FG/NG/FG) junctions by using Dirac-Bogoliubov-de Gennes equation. The graphene is fabricated on SiC and BN substrates separately, so carriers in FG/NG/FG structures are considered as massive relativistic particles. Transmission probability, charge, and spin conductances are studied as a function of exchange energy of ferromagnets (h), size of graphene gap, and thickness of normal graphene region (L) respectively. Using the experimental values of Fermi energy in the normal graphene part (EFN~ 400 meV) and energy gap in graphene (260 meV for SiC and 50 meV for BN substrate), it is shown that this structure can be used for both spin-up and spin-down polarized current. The latter case has different behavior of gapped FG/NG/FG from that of gapless FG/NG/FG structures. Also perfect charge giant magnetoresistance is observed in a range of EFN-mvF2<h<EFN+mvF2.

关键词: graphene, spin-polarized current, giant magnetoresistance, nanoscale structures

Abstract: We investigate the quantum transport property in gapped graphene-based ferromagnetic/normal/ferromagnetic (FG/NG/FG) junctions by using Dirac-Bogoliubov-de Gennes equation. The graphene is fabricated on SiC and BN substrates separately, so carriers in FG/NG/FG structures are considered as massive relativistic particles. Transmission probability, charge, and spin conductances are studied as a function of exchange energy of ferromagnets (h), size of graphene gap, and thickness of normal graphene region (L) respectively. Using the experimental values of Fermi energy in the normal graphene part (EFN~ 400 meV) and energy gap in graphene (260 meV for SiC and 50 meV for BN substrate), it is shown that this structure can be used for both spin-up and spin-down polarized current. The latter case has different behavior of gapped FG/NG/FG from that of gapless FG/NG/FG structures. Also perfect charge giant magnetoresistance is observed in a range of EFN-mvF2<h<EFN+mvF2.

Key words: graphene, spin-polarized current, giant magnetoresistance, nanoscale structures

中图分类号:  (Electronic transport in nanoscale materials and structures)

  • 73.63.-b
72.25.-b (Spin polarized transport) 72.80.Vp (Electronic transport in graphene)