中国物理B ›› 2008, Vol. 17 ›› Issue (8): 3103-3107.doi: 10.1088/1674-1056/17/8/056

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Trap induced slow photoresponse of single CdS nanoribbons

王 翀1, 程 轲2, 邹炳锁3, 王菲菲4   

  1. (1)Institute of Opto-Electronic Information Technology, Yantai University, Yantai 264005, China; (2)Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; (3)Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Micro-Nano Technologies Research Center and National Key Laboratory of CBSC, Hunan University, Changsha 410082, China; (4)School of Physics and Electronic Engineering, Ludong University, Yantai 264025, China;Institute of Physics, Chinese Academy
  • 收稿日期:2008-03-14 修回日期:2008-03-25 出版日期:2008-08-20 发布日期:2008-08-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 20173073), the State Key Development Program for Basic Research of China (Grant No 2002CB713802), the Nano- and Bio-device Key Project of Chinese Academy of Sciences, China, and the 985 Project of Hunan University, China.

Trap induced slow photoresponse of single CdS nanoribbons

Wang Fei-Fei(王菲菲)a)b)†, Wang Chong(王翀)c), Cheng Ke(程轲)b), and Zou Bing-Suo(邹炳锁)b)d)   

  1. a School of Physics and Electronic Engineering, Ludong University, Yantai 264025, China; b Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; c Institute of Opto-Electronic Information Technology, Yantai University, Yantai 264005, China; d Micro-Nano Technologies Research Center and National Key Laboratory of CBSC, Hunan University, Changsha 410082, China
  • Received:2008-03-14 Revised:2008-03-25 Online:2008-08-20 Published:2008-08-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 20173073), the State Key Development Program for Basic Research of China (Grant No 2002CB713802), the Nano- and Bio-device Key Project of Chinese Academy of Sciences, China, and the 985 Project of Hunan University, China.

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摘要： Wurtzite CdS nanoribbons are prepared by using a simple thermal evaporation method. Electron microscopy shows that the ribbons are smooth in surface and uniform in size. Besides the intrinsic emission, the photoluminescence spectrum of a CdS nanoribbon shows a peak at about 580\,nm, which may arise from the defect- and the trap- related transitions. The photoresponse of single CdS nanoribbons is researched. When these nanoribbons are exposed to a laser with a wavelength of 400\,nm, their conductivity is enhanced greatly. The conductivity of CdS nanoribbons cannot be restored to a value without any illumination even at 5 minutes after the illumination. A model is proposed to explain this phenomenon, which may be due to a slow photoresponse induced by the trap.

关键词: CdS, photoresponse

Abstract: Wurtzite CdS nanoribbons are prepared by using a simple thermal evaporation method. Electron microscopy shows that the ribbons are smooth in surface and uniform in size. Besides the intrinsic emission, the photoluminescence spectrum of a CdS nanoribbon shows a peak at about 580 nm, which may arise from the defect- and the trap- related transitions. The photoresponse of single CdS nanoribbons is researched. When these nanoribbons are exposed to a laser with a wavelength of 400 nm, their conductivity is enhanced greatly. The conductivity of CdS nanoribbons cannot be restored to a value without any illumination even at 5 minutes after the illumination. A model is proposed to explain this phenomenon, which may be due to a slow photoresponse induced by the trap.

Key words: CdS, photoresponse

中图分类号:  (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)

  • 78.67.-n
61.46.-w (Structure of nanoscale materials) 72.40.+w (Photoconduction and photovoltaic effects) 73.63.-b (Electronic transport in nanoscale materials and structures) 78.55.Et (II-VI semiconductors) 81.16.-c (Methods of micro- and nanofabrication and processing)