中国物理B ›› 2008, Vol. 17 ›› Issue (7): 2678-2682.doi: 10.1088/1674-1056/17/7/053
宋云成1, 刘晓彦1, 杜刚1, 韩汝琦1, 康晋锋2
Song Yun-Cheng(宋云成), Liu Xiao-Yan(刘晓彦)†, Du Gang(杜刚), Kang Jin-Feng(康晋锋), and Han Ru-Qi(韩汝琦)
摘要: We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carriers and free carriers, on charge trapping memory cell's performances by numerical simulation. Recombination is an indispensable mechanism in charge trapping memory. It helps charge convert process between negative and positive charges in the charge storage layer during charge trapping memory programming/erasing operation. It can affect the speed of programming and erasing operations.
中图分类号: (Pulse and digital circuits)