中国物理B ›› 2008, Vol. 17 ›› Issue (7): 2683-2688.doi: 10.1088/1674-1056/17/7/054

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Effect of fabrication conditions on the properties of indium tin oxide powders

谢卫   

  1. Engineering Institute of Engineer Corps, PLA Univ. ofSci.Tech., Nanjing 210007, China First Scientific Research Institute of Wuxi, Wuxi 214035, China
  • 收稿日期:2008-01-29 修回日期:2008-02-27 出版日期:2008-07-09 发布日期:2008-07-09

Effect of fabrication conditions on the properties of indium tin oxide powders

Xie Wei(谢卫)†   

  1. Engineering Institute of Engineer Corps, PLA Univ. ofSci.Tech., Nanjing 210007, China;  First Scientific Research Institute of Wuxi, Wuxi 214035, China
  • Received:2008-01-29 Revised:2008-02-27 Online:2008-07-09 Published:2008-07-09

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摘要： This paper reports that indium tin oxide (ITO) crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity $\varepsilon $ and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350${^\circ}$C and Sn doping content 6$\sim $8wt{\%} are determined. The application of ITO in the military camouflage field is proposed.

关键词: tin-doped indium, sintering temperature, infrared emissivity, powder resistivity

Abstract: This paper reports that indium tin oxide (ITO) crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity $\varepsilon $ and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350${^\circ}$C and Sn doping content 6$\sim$8wt% are determined. The application of ITO in the military camouflage field is proposed.

Key words: tin-doped indium, sintering temperature, infrared emissivity, powder resistivity

中图分类号:  (Sol-gel processing, precipitation)

  • 81.20.Fw
61.72.S- (Impurities in crystals) 68.37.Lp (Transmission electron microscopy (TEM)) 73.61.Le (Other inorganic semiconductors) 78.30.Hv (Other nonmetallic inorganics) 81.20.Ev (Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation)