中国物理B ›› 2008, Vol. 17 ›› Issue (11): 4300-4304.doi: 10.1088/1674-1056/17/11/056
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
梁 松, 朱洪亮, 潘教青, 赵玲娟, 王鲁峰, 周 帆, 舒惠云, 边 静, 安 欣, 王 圩
Liang Song (梁 松), Zhu Hong-Liang (朱洪亮), Pan Jiao-Qing (潘教青), Zhao Ling-Juan (赵玲娟), Wang Lu-Feng (王鲁峰), Zhou Fan (周 帆), Shu Hui-Yun (舒惠云), Bian Jing (边 静), An Xin (安 欣), Wang Wei (王 圩)
摘要: Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2--3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named {indium flush method,} is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.
中图分类号: (Quantum dots)