中国物理B ›› 2008, Vol. 17 ›› Issue (11): 4300-4304.doi: 10.1088/1674-1056/17/11/056

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

梁 松, 朱洪亮, 潘教青, 赵玲娟, 王鲁峰, 周 帆, 舒惠云, 边 静, 安 欣, 王 圩   

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2008-04-17 修回日期:2008-07-18 出版日期:2008-11-20 发布日期:2008-11-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60706009, 90401025, 60736036, 60777021 and 60476009), the National Key Basic Research Program of China (Grant Nos 2006CB604901 and 2006CB604902) and the National High Technology Research and Development Program of China (Grant Nos 2006AA01Z256, 2007AA03Z419 and 2007AA03Z417).

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Liang Song (梁 松), Zhu Hong-Liang (朱洪亮), Pan Jiao-Qing (潘教青), Zhao Ling-Juan (赵玲娟), Wang Lu-Feng (王鲁峰), Zhou Fan (周 帆), Shu Hui-Yun (舒惠云), Bian Jing (边 静), An Xin (安 欣), Wang Wei (王 圩)   

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2008-04-17 Revised:2008-07-18 Online:2008-11-20 Published:2008-11-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60706009, 90401025, 60736036, 60777021 and 60476009), the National Key Basic Research Program of China (Grant Nos 2006CB604901 and 2006CB604902) and the National High Technology Research and Development Program of China (Grant Nos 2006AA01Z256, 2007AA03Z419 and 2007AA03Z417).

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摘要： Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2--3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named {indium flush method,} is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.

Abstract: Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2--3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named {indium flush method,} is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.

Key words: metal-organic chemical vapour deposition, InAs/GaAs quantum dots, laser

中图分类号:  (Quantum dots)

  • 78.67.Hc
42.55.Px (Semiconductor lasers; laser diodes) 42.60.By (Design of specific laser systems) 78.55.Cr (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)